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APEM Inc AV24LB401 SWITCH PUSHBUTTON SPDT 5A 250V
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DigiKey	AV24LB401	Bulk			16	1 - 10 - 100 $139.66438 1000 $139.66438 10000 $139.66438	Buy Now
Mouser Electronics	AV24LB401					1 - 10 - 100 $125.58 1000 $125.58 10000 $125.58	Get Quote
Master Electronics	AV24LB401					1 - 10 $144.61 100 $112.19 1000 $112.19 10000 $112.19	Buy Now
JRH Electronics ALBFLB40100 ALBFLB40100 Cable Ties
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DigiKey	ALBFLB40100				1	1 $89.76 10 $89.76 100 $89.76 1000 $89.76 10000 $89.76	Buy Now
Samtec Inc EBCM-1-4-10-1-L-B-40-1-R-A EXAMAX 2.00 MM HIGH-SPEED BACKPL Free Sample
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DigiKey	EBCM-1-4-10-1-L-B-40-1-R-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc EBCM-1-4-10-1-L-B-40-1-L-A EXAMAX 2.00 MM HIGH-SPEED BACKPL Free Sample
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DigiKey	EBCM-1-4-10-1-L-B-40-1-L-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc EBCM-2-6-10-1-L-B-40-1-R-A EXAMAX 2.00 MM HIGH-SPEED BACKPL Free Sample
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DigiKey	EBCM-2-6-10-1-L-B-40-1-R-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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LB401 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LB401		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF

LB401 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LB401
Untitled Abstract: No abstract text available Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LB401
TB200 Abstract: amidon BN-61-202 c12 ph zener diode Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200	Original	PDF	TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode
Untitled Abstract: No abstract text available Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LB401
TB207 Abstract: UT85 coax LB401 NJM78L08A UT85-15 UT85-50 120PF Text: 15 30 45 60 75 90 105 30 60 90 120 1 1 2 2 4 P in in W a tts 5 6 7 8 3 4 5 6 P in in W a tts Efficiency @ 65W= 31% 7 TB207 LB401 Freq=750MHz Vds=28Vdc Idq=1.6A 3 Efficiency @ 65W = 43% Linear @12W P1dB=65W 8 TB207 LB401 Freq=500MHz Vds=28Vdc Idq=1.6A 9 9 10	Original	PDF	TB207 LB401 750MHz 28Vdc 500MHz UT85 coax NJM78L08A UT85-15 UT85-50 120PF
LB401 Abstract: TRANSISTOR 1300 Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LB401 LB401 TRANSISTOR 1300
at 8515 Abstract: LB401 TB200 20AWG Polyfet RF Devices 20-1000Mhz Text: Polyfet RF Devices TB200#LB401 Vds=28Vdc Idq=1.0A Gain Flatness/Efficiency 20 100 Gain 90 15 80 10 60 Efficiency 50 Pout fixed at 60W 5 40 30 100 200 300 400 500 Freq in MHz 600 700 800 900 20 1000 Eff in % Gain in dB 70 Polyfet RF Devices TB200#1 LB401 Freq=20MHz Vds=28Vdc Idq=1.0A	Original	PDF	TB200 1LB401 28Vdc LB401 20MHz 500MHz at 8515 20AWG Polyfet RF Devices 20-1000Mhz
LB401 Abstract: LDMOS TRANSISTOR 1300 Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LB401 LB401 LDMOS TRANSISTOR 1300
166A Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz Text: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18	Original	PDF	TB-166A LQ801---> LB401 28Vdc 30MHz 166A TB166A LQ801 FT50A-43 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
Untitled Abstract: No abstract text available Text: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LB401
LK141 Abstract: 60W VHF TV RF amplifier Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation	Original	PDF	ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
TB191 Abstract: LB401 NJM78L08A UT85-50 47PF Text: T B 1 9 1 P o u t /G a i n v s P i n f = 8 5 0 M H z V d s = 2 8 V d c I d q = . 8 A 140 15.0 120 14.0 P1dB=100W 100 Pout 13.0 80 12.0 60 11.0 Gain 40 E fficiency@ 1 0 0 W = 5 5 % 10.0 20 9.0 3 6 9 12 15 Pin in Watts T B 1 9 1 G a in/E f f i c i e n c y v s F r e q	Original	PDF	TB191 850MHz 28Vdc NJM78L08A 270pF 18AWG, LB401 UT85-50 LB401 NJM78L08A UT85-50 47PF

L64000 Abstract: 16217 13X5 40374 cy7c516 pin diagram of 7476 D1986 L64017 MPY016K am29516 Text: L64016 L64017 16-Bit HCMOS Multipliers LSI LOGIC Preliminary Description The L 6 4 0 16 and L 6 4 0 17 are high speed 1 6 x 1 6-bit multipliers with on-chip scan testing. The L 6 4 0 1 6 has independent clocks for the X, Y, M S P and L SP regis ters. The L 6 4 0 1 7 has a single master clock and three	OCR Scan	PDF	L64016 L64017 16-Bit L64017 DS040 L64000 16217 13X5 40374 cy7c516 pin diagram of 7476 D1986 MPY016K am29516
40374 Abstract: amd29510 L64012 TDC1010 carry select adder p1-5k LSP10 MSP 3410 D Text: L64010 L64011 L64012 16-Bit HCMOS Muttiplier-Accumulators LSI LOGIC LSI Logic Corporation 1551 McCarthy Blvd Milpitas CA 95035 408.433.8000 Telex 172153 h • 005783 Description The L64010 replicates industry standard functionality and pinout for a 64-pin DIP package. It includes a full	OCR Scan	PDF	L64010 L64011 L64012 16-Bit 64-pin L64012 68-pin 40374 amd29510 TDC1010 carry select adder p1-5k LSP10 MSP 3410 D