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    SML1001RBN

    Abstract: No abstract text available
    Text: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF O-24Zr L1001R L901R SML901RBN SML1001RBN O-247AD SML1001RBN

    T0247

    Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
    Text: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,


    OCR Scan     		PDF T0264 SML3565BN L3580BN T0247 TG247 SMU004RKN T0220 T0247 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240