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    KM6164002 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6164002 Samsung Electronics CMOS SRAM Original PDF
    KM6164002A Samsung Electronics x16 SRAM Original PDF
    KM6164002A-15 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002A-17 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002A-20 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AE-15 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AE-17 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AE-20 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AI-15 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AI-17 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AI-20 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out Original PDF
    KM6164002AJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJ-17 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJ-20 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJE-20 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJI-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJI-17 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AJI-20 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002AT-17 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM6164002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616400

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F KM616400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM6164002C, KM6164002CI 256Kx16 25/Typ. 80/Typ.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 250mA 240mA 230mA 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM6164002C, KM6164002CI 256Kx16 190mA 185mA 180mA 200mA 195mA

    256x16* STATIC RAM

    Abstract: KM6164002j KM6164002 KM6164002E KM6164002I SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM6164002, KM6164002E, KM6164002I PACKAGE DIMENSIONS 44-SOJ-400 Units : Inches millimeters #23 9.40±0.25 0.370±0.010 10.16 0.400 #44 11.18±0.12 0.440±0.005 0.20 +0.10 -0.05 0.008 +0.004 -0.002 #22 #1 28.98 MAX 1.141 25.58±0.12


    Original     		PDF KM6164002, KM6164002E, KM6164002I 44-SOJ-400 148MAX KM6164002E 256x16* STATIC RAM KM6164002j KM6164002 KM6164002I SRAM sheet samsung

    KM6164002A

    Abstract: No abstract text available
    Text: PRELIMINARY KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM6164002A, KM6164002AE, KM6164002AI 256Kx16 /20ns I/O16 44-SOJ-400 KM6164002A

    Z812

    Abstract: No abstract text available
    Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)


    OCR Scan     		PDF KM6164002/L KM6164002-20 250mA KM6164002-25 240mA KM6164002-35 220mA KM684002J/U 44-SOJ-400 Z812

    KM6164002J-20

    Abstract: KM6164002J20
    Text: PRELIMINARY CMOS SRAM KM6164002 262,144 W ORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.) Operating KM6164002J-20: 240mA (Max.)


    OCR Scan     		PDF KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pin KM6164002 KM6164002J-20 KM6164002J20

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM6164002C/CL, KM6164002CI/CLI 256Kx16 KM61640

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002A CMOS SRAM 25 6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,20 n s M a x • Low Pow er Dissipation Standby (TTL) : 5 0 m A (M ax.) Th e K M 6 1 6 4 00 2 A is a 4 ,1 9 4 ,3 0 4 -b it high-speed Static


    OCR Scan     		PDF KM6164002A

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram

    KM6164002j

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 2 5 6 K x 16 Bit High-Speed CM O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L 256Kx 500nA KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 I/O9-I/O16 KM6164002J/LJ 44-SOJ- KM6164002/L KM6164002j

    Untitled

    Abstract: No abstract text available
    Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI KM6164002B 304-bit 71b4142 G03b70Q KM6164002Bl 44-TS

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM6164002A, KM6164002AE. KM6164002Al CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History B fiX tia . H istory Rev. 0.0 initial release with Design Target.


    OCR Scan     		PDF KM6164002A, KM6164002AE. KM6164002Al 256Kx16 /-/20ns 15/17/20ns /240mA 280/275/270mA -/12ns 12/13/14nstput

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)


    OCR Scan     		PDF KM6164002A 256Kx KM6164002A-12 164002A KM6164002A-20 KM6164002AJ 44-SOJ-4QO KM6164002A 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L 256Kx KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164002/L

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D 7 = ^4 1 4 2 0D14230 1ST ADVANCE INFORMATION KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.)


    OCR Scan     		PDF 0D14230 KM6164002 KM6164002J-15: 280mA KM6164002J-20: 260mA KM6164002J-25: 240mA KM6164002J: 44-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)


    OCR Scan     		PDF D0177B0 KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: KM6164002

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC>S):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164Z 002152b

    d5101

    Abstract: C5VI
    Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM 2S6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : tOmA(Max ) Operating KM6164002A -1 5 : 210mA(Max.)


    OCR Scan     		PDF KM6164002A, KM6164002AE, KM6164002AI KM6164002A 210mA 205mA 200mA KM6164002AJ d5101 C5VI

    Untitled

    Abstract: No abstract text available
    Text: KM6164002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996


    OCR Scan     		PDF KM6164002A 256Kx16 /20ns 15/17/20ns

    71L414E

    Abstract: KIVI6164002A KM6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20
    Text: KM6164002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 *‘ (Max.) The KM6164002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The


    OCR Scan     		PDF KIVI6164002A 256Kx KM6164002A I/O16 KM6164002AJ 44-SOJ-400 304-bit 71L414E KIVI6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.)


    OCR Scan     		PDF KM6164002B, KM6164002Bi 2S6KX16 KM6164002B-10 260mA KM6164002B 255mA 250mA KM6164002BJ