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    Samsung Semiconductor KM44V16004CS-5

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    KM44V16004C Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44V16004CK-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CK-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CK-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CK-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CK-L-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CK-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-L-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16004CS-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM44V16004C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


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    PDF KM44V16004C KM44V16104C 16Mx4 400mil

    Untitled

    Abstract: No abstract text available
    Text: KMM372F320 8 0CK4 DRAM MODULE KMM372F320(8)0CK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0CK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0CK4 consists of thirty-six CMOS 16Mx4bits


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    PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin

    KMM372F3200CS1

    Abstract: KMM372F3280CS1
    Text: KMM372F320 8 0CS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


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    PDF KMM372F320 000DIA± 150Max 81Max) 16Mx4 KMM372F3200CS1 KM44V16104CS. KMM372F3280CS1 KM44V16004CS. 01Max

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F160 8 0CK2 KMM366F160(8)0CK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0CK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0CK2 consists of sixteen CMOS 16Mx4bits


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    PDF KMM366F160 16Mx4, 16Mx64bits 16Mx4bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM374F160 8 0CK1 DRAM MODULE KMM374F160(8)0CK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0CK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung


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    PDF KMM374F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372F160 8 0CK/CS DRAM MODULE KMM372F160(8)0CK/CS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0C is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0C consists of eighteen CMOS 16Mx4bits


    Original
    PDF KMM372F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin

    IC 1458

    Abstract: KMM372F3200CS1 KMM372F3280CS1 KM44V16104 KM44V16004
    Text: KMM372F320 8 0CS1 DRAM MODULE KMM372F320(8)0CS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0C1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0C1 consists of thirty-six CMOS 16Mx4bits


    Original
    PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin IC 1458 KMM372F3200CS1 KMM372F3280CS1 KM44V16104 KM44V16004

    Untitled

    Abstract: No abstract text available
    Text: KMM372F320 8 0CK3 DRAM MODULE KMM372F320(8)0CK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0C consists of thirty-six CMOS 16Mx4bits


    Original
    PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM374F160 8 0CK3 DRAM MODULE KMM374F160(8)0CK3 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0CK3 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung


    Original
    PDF KMM374F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l


    OCR Scan
    PDF KM44V16004C KM44V16104C 400mil

    k2917

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 1 6 M x 4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan
    PDF KM44V16004C KM44V16104C 400mil k2917