Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416V1200BT Search Results

    SF Impression Pixel

    KM416V1200BT Price and Stock

    Samsung Semiconductor KM416V1200BT-L6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416V1200BT-L6 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KM416V1200BT Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V1200BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF

    KM416V1200BT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM332V204BT-L KMM332V224BT-L KMM332V224BT-L using1MX16, KMM332V20 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R

    Untitled

    Abstract: No abstract text available
    Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M X 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM


    OCR Scan     		PDF KMM332V204BT-L KMM332V224BT-L KMM332V204BT-L KMM332V224BT-L using1MX16, KMM332V20 332V20 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENER AL FEATURES D ESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V104BT-L KMM332V124BT-L 1Mx32 KMM332V104BT-L6/L7 cycles/128ms 60/70ns) 332V124BT-L6/L7

    Untitled

    Abstract: No abstract text available
    Text: KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L with Fast Page Mode 1M x 32 DRAM SODIMM, 4K & 1K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 332V10 2 4BT is a 1M x 32 bits Dynamic Part Identification


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V104BT-L KMM332V124BT-L 332V10 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENERAL FEATURES DESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V124BT-L 1Mx32 KMM332V10 1Mx16bit 44-pin 72-pin