KM416V1004C |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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KM416V1004CJ-45 |
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Samsung Electronics
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1M x 16-Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
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Original |
PDF
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KM416V1004CJ-5 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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KM416V1004CJ-5 |
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Samsung Electronics
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3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
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Scan |
PDF
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KM416V1004CJ-50 |
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Samsung Electronics
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1M x 16-Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
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Original |
PDF
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KM416V1004CJ-6 |
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Samsung Electronics
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3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
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Scan |
PDF
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KM416V1004CJ-60 |
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Samsung Electronics
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1M x 16-Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
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Original |
PDF
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KM416V1004CJ-L-45 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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KM416V1004CJL-45 |
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Samsung Electronics
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1M x 16-Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
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Original |
PDF
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KM416V1004CJ-L-5 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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KM416V1004CJ-L5 |
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Samsung Electronics
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3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
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Scan |
PDF
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KM416V1004CJL-50 |
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Samsung Electronics
|
1M x 16-Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
|
Original |
PDF
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KM416V1004CJ-L-6 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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KM416V1004CJ-L6 |
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Samsung Electronics
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3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
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Scan |
PDF
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KM416V1004CJL-60 |
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Samsung Electronics
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1M x 16-Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
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Original |
PDF
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KM416V1004CT-45 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
|
Original |
PDF
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KM416V1004CT-5 |
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Samsung Electronics
|
1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
|
Original |
PDF
|
KM416V1004CT-5 |
|
Samsung Electronics
|
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
|
Scan |
PDF
|
KM416V1004CT-50 |
|
Samsung Electronics
|
1M x 16-Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
|
Original |
PDF
|
KM416V1004CT-6 |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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