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    KM416S1020BT Search Results

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    KM416S1020BT Price and Stock

    Samsung Semiconductor KM416S1020BT-G10

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    Bristol Electronics KM416S1020BT-G10 356
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    SEC KM416S1020BT-G10

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    ComSIT USA KM416S1020BT-G10 960
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    KM416S1020BT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT-G10T 1/2 IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD GND GND GND VDD VDD GND GND VDD VDD NC NC VDD INPUT A0 -A10 A11 : : : CAS CKE : CLK : : CS LDQM, UDQM :


    Original
    PDF KM416S1020BT-G10T

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original
    PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


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    PDF KM416S1020BT KM416S1020B/KM416S1021B 50-TSOP2-400F 50-TSOP2-400R D03b2b2

    CI373

    Abstract: KMM366S104BTN-G2 kmm366s104
    Text: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF KMM366S104BTN KMM366S104BTN 1Mx64 1Mx16, KMM366S1Q4BTN 400mil 168-pin CI373 KMM366S104BTN-G2 kmm366s104

    KMM466S104BT-F0

    Abstract: No abstract text available
    Text: KMM466S104BT NEW JEDEC SDRAM MODULE KMM466S104BT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DR AM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104BT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF KMM466S104BT KMM466S104BT 400mil 144-pin 1Mx16 KMM466S104BT-F0

    KMM366S204BTN-G0

    Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
    Text: KMM366S204BTN NEW JEDEC SDRAM MODULE KMM366S204BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S204BTN is a 2M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


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    PDF KMM366S204BTN KMM366S204BTN 2Mx64 1Mx16, 400mil 168-pin KMM366S204BTN-G8 KMM366S204BTN-G0 KMM366S204BTN-G2 cdq40

    Untitled

    Abstract: No abstract text available
    Text: KMM466S204BT NEW JEDEC SDRAM MODULE KMM466S204BT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1 Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204BT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF KMM466S204BT KMM466S204BT 2Mx64 400mil 144-pin

    KM416S1020B

    Abstract: QQ372G7
    Text: KM416S1020B CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION •• JEDEC standard 3.3V power supply The KM416S1020B is 16,777,216 bits synchronous high data - LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,


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    PDF KM416S1020B 16Bit KM416S1020B G037213 QQ372G7

    SDRAM 1996

    Abstract: No abstract text available
    Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


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    PDF KM416S1021BT 16Bit KM416S1020B/KM416S1021B hig1996 003300fci 50-TSOP2-400F 50-TSOP2-400R D03b2b2 SDRAM 1996