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    K2613 Search Results

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    K2613 Price and Stock

    TE Connectivity KTKK-2613A

    KTKK-2613A
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    DigiKey KTKK-2613A Bulk 50
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    Newark KTKK-2613A Bulk 1
    • 1 $924.61
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    Interstate Connecting Components KTKK-2613A
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    Master Electronics KTKK-2613A
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    Kamaya Inc RMC1-2K2613FTE

    RES 261K OHM 1% 3/4W 2010
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    DigiKey RMC1-2K2613FTE Reel 4,000
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    Kamaya Inc RMC1-8K2613FTP

    RES 261K OHM 1% 1/4W 1206
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    DigiKey RMC1-8K2613FTP Reel 5,000
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    Kamaya Inc RMC1-16K2613FTP

    RES 261K OHM 1% 1/10W 0603
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    DigiKey RMC1-16K2613FTP Reel 5,000
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    Vishay Dale RNC55K2613DMBSL

    RES 261K OHM 0.5% 1/8W AXIAL
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    DigiKey RNC55K2613DMBSL Bulk 1,000
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    Find more K2613 price and stock on Findchips.com

    K2613 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K2613

    Abstract: No abstract text available
    Text: K2613 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)


    Original     		K2613 PDF

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 910lled K2613 toshiba k2613 2SK2613 PDF

    toshiba k2613

    Abstract: K2613 K2613 TOSHIBA 2SK2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 K2613 TOSHIBA 2SK2613 PDF

    toshiba k2613

    Abstract: 2SK2613 K2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 910lled toshiba k2613 2SK2613 K2613 PDF

    Untitled

    Abstract: No abstract text available
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 PDF

    toshiba k2613

    Abstract: K2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 PDF

    2SK2613

    Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 2SK2613 k2613 toshiba k2613 K2613 TOSHIBA K261 PDF

    toshiba k2613

    Abstract: K2613 2SK2613 SC-65
    Text: K2613 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII K2613 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 特 単位: mm 長 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK2613 2-16C1B SC-65 toshiba k2613 K2613 2SK2613 SC-65 PDF

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.)


    Original     		2SK2613 K2613 toshiba k2613 2SK2613 PDF

    toshiba k2613

    Abstract: K2613 2SK2613
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: Yfs = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 2SK2613 PDF

    Untitled

    Abstract: No abstract text available
    Text: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF