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    IXTH67N08 Search Results

    IXTH67N08 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH67N08 IXYS MegaMOS Power MOSFETs Scan PDF

    IXTH67N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF0120

    Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)


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    PDF IXTH67N08 IXTM67N08 IXTH75N08 IXTM75N08 MTE75N08 VN0109N9 BS170F VN0109N3 VN0109N2 IRF0120 VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604

    a 1712 mosfet

    Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
    Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous


    OCR Scan
    PDF IXTH67N08 IXTH67N10 IXTM67N08 IXTM67N10 IXTH67N10, a 1712 mosfet ID 48 Megamos K 1120 megamos 46 08 09 6

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan
    PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    ID 48 Megamos

    Abstract: megamos megamos 48 f g megamos IXTZ35N25MB IXTH24N45 0117 megamos IXTP15N25MA ixth24n50ma IXTP22N20MA
    Text: I X Y S CORP IflE D • 4bfib£5b QD00SS7 3 ■ J frrorFE Ts' and LIMOFETsw IXYS Is developing new integrated solutions that simplify the logic-topower interface while adding safe­ guard protection features to the power device. Because of its process compatibility with CMOS, HDMOS


    OCR Scan
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