IXTA170N075T2 Search Results

IXTA170N075T2 Price and Stock

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Littelfuse Inc IXTA170N075T2 MOSFET N-CH 75V 170A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA170N075T2	Tube			300	1 - 10 - 100 - 1000 $1.97453 10000 $1.97453	Buy Now
Newark	IXTA170N075T2	Bulk			300	1 - 10 - 100 $2.71 1000 $2.18 10000 $2.02	Buy Now
IXYS Corporation IXTA170N075T2 MOSFETs 170 Amps 75V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTA170N075T2					1 $4.07 10 $3.42 100 $2.7 1000 $2.53 10000 $2.53	Get Quote
Future Electronics	IXTA170N075T2	Tube		27 Weeks	300	1 - 10 - 100 $2.72 1000 $2.54 10000 $2.49	Buy Now
TTI	IXTA170N075T2	Tube			300	1 - 10 - 100 - 1000 $2.5 10000 $2.5	Buy Now
TME	IXTA170N075T2		46		1	1 $3.25 10 $2.58 100 $2.34 1000 $2.34 10000 $2.34	Buy Now
IXYS Integrated Circuits Division IXTA170N075T2 MOSFET DIS.170A 75V N-CH TO263(D2PAK) TRENCHT2 SMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTA170N075T2		50			1 $3.28999 10 $3.28999 100 $2.9909 1000 $2.9909 10000 $2.9909	Buy Now

IXTA170N075T2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTA170N075T2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 170A TO-263		Original	PDF

IXTA170N075T2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A
IXTP170N075T2 Abstract: IXTA170N075T2 170N075T2 Text: TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A IXTP170N075T2 IXTA170N075T2
IXTP170N075T2 Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2 Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 IXTP170N075T2 ixtp170n075 T170N IXTA170N075T2
IXTP220N04T2 Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2 Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management	Original	PDF	O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
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