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IXYS Corporation IXGT40N120B2D1 IGBT PT 1200V 75A TO268AA
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IXGT40N120B2D1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGT40N120B2D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 380W TO268		Original	PDF

IXGT40N120B2D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGT40N120B2D1 Abstract: No abstract text available Text: Product Detail Part Num: Description: Configuration: Package Style: Status: Support Docs: IXGT40N120B2D1 Mid-Frequency Range 15 kHz - 40 kHz , IGBT with freewheeling diode Copack (FRD) TO-268 Not for New Designs: Contact the factory for lead times (part is still available for purchase).	Original	PDF	IXGT40N120B2D1 O-268 IC110, IXGT40N120B2D1
Untitled Abstract: No abstract text available Text: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM	Original	PDF	IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns O-247 IF110
g40n120 Abstract: 40n120 ixgh40n120 IXGT40N120B2D1 IXGH40N120B2D1 ixgh40n12 ixgh40n1 IF110 2VGE Text: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM	Original	PDF	IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns O-247 IF110 g40n120 40n120 ixgh40n120 IXGT40N120B2D1 IXGH40N120B2D1 ixgh40n12 ixgh40n1 IF110 2VGE
g40n120 Abstract: No abstract text available Text: High Voltage IGBT with Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE sat ≤ 3.5V tfi(typ) = 140ns Symbol Test Conditions VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V VGEM Transient	Original	PDF	IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns IC110 IF110 O-247 O-268 g40n120