IXGP12N60B Search Results

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IXYS Corporation IXGP12N60B IGBT 600V 24A 100W TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
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IXGP12N60B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGP12N60B		IXYS	600V HiPerFAST IGBT		Original	PDF

IXGP12N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGD32N60B-5X Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43	Original	IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B	PDF
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
Untitled Abstract: No abstract text available Text: n i x Y S Preliminary Data Sheet IXGA12N60B IXGP12N60B HiPerFAST IGBT VCES 600 V 24 A 2.1 V 55 ns ^C25 V CE sat typ t Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V vCGR ^ = 25°C to 150°C; RGE = 1 Mi2 600 V Maximum Ratings VGES Continuous ±20	OCR Scan	IXGA12N60B IXGP12N60B	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Preliminary Data Sheet VCES IXGA12N60B IXGP12N60B HiPerFAST IGBT ^C25 600 V 24 A “ VCE sat typ Maximum Ratings Symbol TestConditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 600 V TO-263 AA (IXGA) v Continuous	OCR Scan	IXGA12N60B IXGP12N60B O-263	PDF
IXGH24N50B Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100 Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500	OCR Scan	IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100	PDF
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C	PDF