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    IXGH24N60C4 Price and Stock

    IXYS Corporation IXGH24N60C4

    IGBT 600V 56A 190W TO247
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    IXYS Corporation IXGH24N60C4D1

    IGBT 600V 56A 190W TO247
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    IXGH24N60C4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH24N60C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF
    IXGH24N60C4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF

    IXGH24N60C4 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGP24N60C4 IXGH24N60C4 O-220AB 338B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP24N60C4 IXGH24N60C4 IC110 O-220AB O-247 338B2

    IXGH24N60C4D1

    Abstract: 24N60C4D1 G24N60
    Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		PDF IXGH24N60C4D1 IC110 O-247 IF110 24N60C4D1 IXGH24N60C4D1 G24N60

    IC110

    Abstract: IXGH24N60C4 IXGP24N60C4
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP24N60C4 IXGH24N60C4 IC110 O-220AB 338B2 IC110 IXGH24N60C4 IXGP24N60C4

    IXGH24N60C4D1

    Abstract: IF110
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH24N60C4D1 IC110 O-247 IF110 338B2 IXGH24N60C4D1 IF110

    IXGH24N60C4

    Abstract: IXGP24N60C4
    Text: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 IC110 O-263 O-220 338B2 IXGH24N60C4 IXGP24N60C4

    24N60C4D1

    Abstract: G24N60
    Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		PDF IC110 IXGH24N60C4D1 O-247 IF110 24N60C4D1 G24N60