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    IXFT16N120P Search Results

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    IXFT16N120P Price and Stock

    Littelfuse Inc IXFT16N120P

    MOSFET N-CH 1200V 16A TO268
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    DigiKey IXFT16N120P Tube 352 1
    • 1 $22.86
    • 10 $22.86
    • 100 $14.537
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    Newark IXFT16N120P Bulk 300
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    RS IXFT16N120P Bulk 8 Weeks 30
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    • 100 $20.72
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    Littelfuse Inc IXFT16N120P-TRL

    MOSFET N-CH 1200V 16A TO268
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    DigiKey IXFT16N120P-TRL Reel 400
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    Newark IXFT16N120P-TRL Reel 400
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    RS IXFT16N120P-TRL Bulk 8 Weeks 400
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    IXYS Corporation IXFT16N120P

    MOSFETs 16 Amps 1200V 1 Rds
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    Mouser Electronics IXFT16N120P 360
    • 1 $20.37
    • 10 $16.74
    • 100 $14.53
    • 1000 $13.4
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    Future Electronics IXFT16N120P Tube 26 Weeks 300
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    TTI IXFT16N120P Tube 300
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    TME IXFT16N120P 1
    • 1 $22.93
    • 10 $18.28
    • 100 $16.48
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    IXYS Corporation IXFT16N120P-TRL

    MOSFETs MOSFET Discretes
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    Mouser Electronics IXFT16N120P-TRL
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    TTI IXFT16N120P-TRL Reel 400
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    • 1000 $13.94
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    IXYS Integrated Circuits Division IXFT16N120P

    MOSFET N-CH 1200V 16A TO268 / Polar Power MOSFET HiPerFET
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    Win Source Electronics IXFT16N120P 4,600
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    • 10 $17.3546
    • 100 $14.5554
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    IXFT16N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT16N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 16A TO268 Original PDF

    IXFT16N120P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 25VDS 16N120P PDF

    IXFH16N120P

    Abstract: No abstract text available
    Text: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFT16N120P IXFH16N120P 300ns O-268 O-247 16N120P 09-12-12-B IXFH16N120P PDF

    IXFH16N120

    Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
    Text: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 ixfh16n120p 1200v to247 MOSFET PDF

    IXFH16N120

    Abstract: No abstract text available
    Text: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 PDF