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    IXFB40N110P Price and Stock

    Littelfuse Inc IXFB40N110P

    MOSFET N-CH 1100V 40A PLUS264
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    DigiKey IXFB40N110P Tube 32 1
    • 1 $35.34
    • 10 $35.34
    • 100 $34.6168
    • 1000 $34.6168
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    Newark IXFB40N110P Bulk 300
    • 1 -
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    • 1000 $36.28
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    RS IXFB40N110P Bulk 8 Weeks 25
    • 1 -
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    • 100 $53.54
    • 1000 $53.54
    • 10000 $53.54
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    IXYS Corporation IXFB40N110P

    MOSFETs 40 Amps 1100V 0.2600 Rds
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    Mouser Electronics IXFB40N110P
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    • 1000 $34.61
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    TTI IXFB40N110P Tube 300
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    • 1000 $34.62
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    IXYS Integrated Circuits Division IXFB40N110P

    MOSFET DIS.40A 1100V N-CH PLUS264-3 HIPERFET THT
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    Ozdisan Elektronik IXFB40N110P
    • 1 $58.68897
    • 10 $58.68897
    • 100 $54.8495
    • 1000 $54.8495
    • 10000 $54.8495
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    IXFB40N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB40N110P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264 Original PDF

    IXFB40N110P Datasheets Context Search

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    IXFB40N110P

    Abstract: IXFB 40N110P 40n110p F40N
    Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS = 1100V ID25 = 40A Ω RDS on ≤ 260mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB40N110P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarVHVTM HiPerFET Power MOSFET IXFB40N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS PLUS264TM (IXFB)


    Original     		PDF IXFB40N110P 300ns PLUS264TM 338B2

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P