IW4011B Search Results

IW4011B Price and Stock

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IKSemicon Co Ltd IW4011BD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Maritex	IW4011BD		369			1 $0.157 10 $0.149 100 $0.125 1000 $0.113 10000 $0.113	Buy Now

IW4011B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IW4011B		Beijing Estek Electronics	NAND gates provide the system designer with direct implementation of the NAND function		Original	PDF
IW4011B		Unknown			Original	PDF
IW4011BD		Integral	Quad 2-input NAND gate, high-voltage silicon-gate CMOS		Original	PDF
IW4011BN		Integral	Quad 2-input NAND gate, high-voltage silicon-gate CMOS		Original	PDF

IW4011B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IW4011B Abstract: No abstract text available Text: 北京伊泰克电子有限公司简介 IW4011B 是一种可供系统设计师直接实现“与非”功能的与非门。特性 1 工作电压范围：3.0V～18V 2、超出工作温度范围且在 18V 时最大输入电流为 1uA 25℃，18V 时是 100nA	Original	PDF	IW4011B 0V18V 100nA IW4011B
40111 Abstract: IW4011B IW4011BD IW4011BN Text: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C	Original	PDF	IW4011B IW4011B IW4011BN IW4011BD 40111
6A07 Abstract: IW4011B Text: IW4011B Description The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. Features •   Operating Voltage Range: 3.0 to 18 V at 18 V over full packageMaximum input current of 1 temperature range 100 nA at 18 V and 25 C	Original	PDF	IW4011B IW4011B 6A06--6A07 6A07
IW4011BN Abstract: 4 nand dip 16 supply voltage 30 v IW4011B IW4011BD Text: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C	Original	PDF	IW4011B IW4011B IW4011BN IW4011BD 4 nand dip 16 supply voltage 30 v
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original	PDF