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    IRGS4064DPBF Search Results

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    Infineon Technologies AG IRGS4064DPBF

    IGBT 600V 20A 101W D2PAK
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    DigiKey IRGS4064DPBF Tube
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    International Rectifier IRGS4064DPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA IRGS4064DPBF 450
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    IRGS4064DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGS4064DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 101W D2PAK Original PDF

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    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418.

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V