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Vishay Siliconix IRFR310TRPBF MOSFET N-CH 400V 1.7A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR310TRPBF	Cut Tape	10,574		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR310TRPBF	Digi-Reel	10,574		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR310TRPBF	Reel	8,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
Chip 1 Exchange	IRFR310TRPBF		12,987			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFR310TRPBF-BE3 MOSFET N-CH 400V 1.7A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR310TRPBF-BE3	Cut Tape	3,869		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR310TRPBF-BE3	Digi-Reel	3,869		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR310TRPBF-BE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
Vishay Siliconix IRFR310PBF MOSFET N-CH 400V 1.7A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR310PBF	Tube	2,314		1	1 $2.08 10 $2.08 100 $0.93867 1000 $0.70945 10000 $0.5525	Buy Now
ComSIT USA	IRFR310PBF		1,019			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IRFR310PBF		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.748	Buy Now
Vishay Siliconix IRFR310 MOSFET N-CH 400V 1.7A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR310	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $1.3125	Buy Now
Vishay Siliconix IRFR310TR MOSFET N-CH 400V 1.7A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR310TR	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $1.3125	Buy Now

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IRFR310 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFR310	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR310	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 1.7A DPAK	Original	PDF
IRFR310	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR310	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFR310	International Rectifier	Surface Mount HEXFETs	Scan	PDF
IRFR310	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFR310	International Rectifier	Power MOSFET	Scan	PDF
IRFR310	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 1.7A, Pkg Style TO-252AA	Scan	PDF
IRFR310	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFR310	Unknown	FET Data Book	Scan	PDF
IRFR310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR310	Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF
IRFR3103	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 1.7A DPAK	Original	PDF
IRFR3103TR	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 1.7A DPAK	Original	PDF

IRFR3103TRL	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 1.7A DPAK	Original	PDF
IRFR3103TRR	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 1.7A DPAK	Original	PDF
IRFR310A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR310A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR310A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR310A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF

IRFR310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO252AA Abstract: EIA-541 IRFR120 IRFU120 TO-252AA Text: PD - 95028A IRFR310PbF IRFU310PbF • Lead-Free 1 IRFR/U310PbF 2 IRFR/U310PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234	Original	PDF	5028A IRFR310PbF IRFU310PbF IRFR/U310PbF O-252AA) IRFR120 IRFU120 TO252AA EIA-541 IRFR120 IRFU120 TO-252AA
irfu310 Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFU310 vishay siliconix 99 ipak Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 IRFR310/SiHFR310) IRFU310/SiHFU310) O-252) O-251) 18-Jul-08 irfu310 IRFR310 SiHFR310-E3 vishay siliconix 99 ipak
Untitled Abstract: No abstract text available Text: PD - 95028A IRFR310PbF IRFU310PbF • Lead-Free Document Number: 91272 12/10/04 www.vishay.com 1 IRFR/U310PbF Document Number: 91272 www.vishay.com 2 IRFR/U310PbF Document Number: 91272 www.vishay.com 3 IRFR/U310PbF Document Number: 91272 www.vishay.com 4	Original	PDF	5028A IRFR310PbF IRFU310PbF IRFR/U310PbF 08-Mar-07
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single • • • • • • • • D DPAK (TO-252)	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
irfu310 Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFR310-GE3 SiHFR310TRL-GE3 SiHFU310 Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251) irfu310 IRFR310 SiHFR310-E3 SiHFR310-GE3 SiHFR310TRL-GE3
IRFR310 Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFR310 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 1.7 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	PDF	IRFR310 IRFR310
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310, SiHFR310) Qgs (nC)	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single • • • • • • • • D DPAK (TO-252)	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
IRFU310B Abstract: IRFR310B Text: IRFR310B / IRFU310B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR310B IRFU310B IRFU310B
IRFR310B Abstract: IRFU310B Text: IRFR310B / IRFU310B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR310B IRFU310B IRFU310B
Diode P 619 Abstract: U120 EIA-541 IRFR120 IRFU120 IRFU310PBF Text: PD - 95028A IRFR310PbF IRFU310PbF • Lead-Free www.irf.com 1 12/10/04 IRFR/U310PbF 2 www.irf.com IRFR/U310PbF www.irf.com 3 IRFR/U310PbF 4 www.irf.com IRFR/U310PbF www.irf.com 5 IRFR/U310PbF 6 www.irf.com IRFR/U310PbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	5028A IRFR310PbF IRFU310PbF IRFR/U310PbF Wavefo10PbF Diode P 619 U120 EIA-541 IRFR120 IRFU120 IRFU310PBF
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)

Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9	Original	PDF	IRFR310, IRFU310, SiHFR310 SiHFU310 IRFR310/SiHFR310) IRFU310/SiHFU310) O-252) O-251) 12-Mar-07
SS*2n60b Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031	Original	PDF	O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
IRFR311 Abstract: U311 IRFR310 irfu310 250M ISE Electronics RE25 Text: N-CHANNEL POWER MOSFETS IRFR310/311 IRFU310/311 FEATURES D-PAK • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRFR310/311 IRFU310/311 IRFR310/U310 IRFR311/U311 IRFR311 U311 IRFR310 irfu310 250M ISE Electronics RE25
1RFR310 Abstract: irfu310 AN-994 IRFR310 Text: International S Rectifier PD-9.597A IRFR310 IRFU310 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR310 Straight Lead (IRFU310) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR310 IRFR310) IRFU310) 1RFR310 irfu310 AN-994 IRFR310
IRFR310 Abstract: No abstract text available Text: IRFR310 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 3 .6 Î2 1.7 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR310 IRFR310
5B2 rectifier Abstract: 5b2 diode Text: M Ö 55452 International SæJ Rectifier D D lS b fiö 5b2 i IN R IRFR310 IRFU310 HEXFET Power M O SFET • • • • • • • PD-9.597A IN T E R N A T IO N A L Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR310 Straight Lead (IRFU310)	OCR Scan	PDF	IRFR310 IRFU310 IRFR310) IRFU310) IRFR310. 5B2 rectifier 5b2 diode
Power MOSFET 50V 10A IN DPACK Abstract: U310 irfr310 20V 1.5A MOSFET N-channel power MOSFET dpack u-310 ADE 08A Text: IRFR310/312 IRFU310/312 N-CHANNEL POWER MOSFET FEATURES • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRFR310/312 IRFU310/312 IRFR310/312 IRFR310/U310 IRFR312/U312 Power MOSFET 50V 10A IN DPACK U310 irfr310 20V 1.5A MOSFET N-channel power MOSFET dpack u-310 ADE 08A
Untitled Abstract: No abstract text available Text: IRFR310 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 3 .6 Q 1 .7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR310
Untitled Abstract: No abstract text available Text: IRFR310 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 -7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR310

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IRFR310 Datasheets (38)

IRFR310 Datasheets Context Search

TO252AA

irfu310

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irfu310

IRFR310

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IRFU310B

IRFR310B

Diode P 619

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SS*2n60b

IRFR311

1RFR310

IRFR310

5B2 rectifier

Power MOSFET 50V 10A IN DPACK

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