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    IRFL9110PBF Search Results

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    IRFL9110PBF Price and Stock

    Vishay Siliconix IRFL9110PBF

    MOSFET P-CH 100V 1.1A SOT223
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFL9110PBF Tube 2,500
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    • 10000 $0.30177
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    RS IRFL9110PBF Bulk 4,000
    • 1 -
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    • 1000 -
    • 10000 $0.399
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    Quest Components IRFL9110PBF 120
    • 1 $2.44
    • 10 $2.44
    • 100 $1.342
    • 1000 $1.22
    • 10000 $1.22
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    IRFL9110PBF 4
    • 1 $1.65
    • 10 $1.518
    • 100 $1.518
    • 1000 $1.518
    • 10000 $1.518
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    Vishay Intertechnologies IRFL9110PBF

    MOSFET P-CHANNEL 100V - Bulk (Alt: IRFL9110PBF)
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    Avnet Americas IRFL9110PBF Bulk 4,000
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    RS IRFL9110PBF Bulk 4,000
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    • 10000 $0.78
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    Bristol Electronics IRFL9110PBF 2,041
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    INTER-RECTIFIER IRFL9110PBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFL9110PBF 3,558
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    International Rectifier IRFL9110PBF

    TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,1.1A I(D),TO-261AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFL9110PBF 32
    • 1 $2.4
    • 10 $1.92
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
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    Vishay Intertechnologies IRFL9110TRPBF

    MOSFETs P-Chan 100V 1.1 Amp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IRFL9110TRPBF Reel 2,500
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    IRFL9110PBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFL9110PBF International Rectifier HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 1.2 Ohm , ID = -1.1A ) Original PDF
    IRFL9110PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223 Original PDF

    IRFL9110PBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FL014

    Abstract: TO-261AA Package TO261AA IRFL014 261AA
    Text: IRFL9110PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions -100 ––– ––– V VGS = 0V, ID = 250µA


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    PDF IRFL9110PbF EIA-481 EIA-541. EIA-418-1. FL014 TO-261AA Package TO261AA IRFL014 261AA

    95320

    Abstract: ST 95320 FL014 IRF 100A AN-994
    Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFL9110PbF -100V OT-223 EIA-481 EIA-541. EIA-418-1. 95320 ST 95320 FL014 IRF 100A AN-994

    Untitled

    Abstract: No abstract text available
    Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFL9110PbF -100V OT-223 08-Mar-07

    95320

    Abstract: st 95320 FL014 91196 AN-994
    Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFL9110PbF -100V OT-223 12-Mar-07 95320 st 95320 FL014 91196 AN-994

    S10 diode

    Abstract: 91196
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21


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    PDF IRFL9110, SiHFL9110 2002/95/EC OT-223 OT-223 18-Jul-08 S10 diode 91196

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    91196

    Abstract: No abstract text available
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


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    PDF IRFL9110, SiHFL9110 OT-223 12-Mar-07 91196

    siliconix sot-223 marking

    Abstract: IRFL9110 irfl9110pbf SiHFL9110 TH 1287 SiHFL9110-E3 IRFL9110TRPBF 91196
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single SOT-223 G S G Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    PDF IRFL9110, SiHFL9110 OT-223 2002/95/EC OT-223 18-Jul-08 siliconix sot-223 marking IRFL9110 irfl9110pbf TH 1287 SiHFL9110-E3 IRFL9110TRPBF 91196

    IRFL9110

    Abstract: No abstract text available
    Text: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the


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    PDF IRFL9110, SiHFL9110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFL9110

    IRFL9110TRPBF

    Abstract: irfl9110 SiHFL9110-GE3 irfl9110pbf s8210
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21


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    PDF IRFL9110, SiHFL9110 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL9110TRPBF irfl9110 SiHFL9110-GE3 irfl9110pbf s8210

    IRFL9110

    Abstract: SiHFL9110 SiHFL9110-E3 irfl9110pbf
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    PDF IRFL9110, SiHFL9110 OT-223 OT-223 18-Jul-08 IRFL9110 SiHFL9110-E3 irfl9110pbf

    s8210

    Abstract: 91196
    Text: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the


    Original
    PDF IRFL9110, SiHFL9110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s8210 91196

    IRFL9110

    Abstract: s8210 SiHFL9110 SiHFL9110-E3 SiHFL9110-GE3
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21


    Original
    PDF IRFL9110, SiHFL9110 OT-223 2002/95/EC 11-Mar-11 IRFL9110 s8210 SiHFL9110-E3 SiHFL9110-GE3

    Untitled

    Abstract: No abstract text available
    Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


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    PDF IRFL9110, SiHFL9110 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfp460pbf

    Abstract: irf740 IRFP360PBF IRFL9014PBF IRF840PBF IRFP064 IRF9630PBF IRFD9110 339 D-PAK IRLL110
    Text: 2008-2012:QuarkCatalogTempNew 9/20/12 4:30 PM Page 2008 INTERCONNECT TEST & MEASUREMENT 25 Power MOSFETs P Channel Power MOSFETs RoHS P Channel, –60 Volt VDSS D-PAK Stock No. Mfr.’s Type VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive


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    PDF IRF9Z14PBF IRF9Z14SPBF IRFR9024PBF IRFD9024PBF IRFI9Z24GPBF IRFI9Z34GPBF IRFL9014PBF IRFR9014PBF IRFU9014PBF IRFD9010PBF irfp460pbf irf740 IRFP360PBF IRF840PBF IRFP064 IRF9630PBF IRFD9110 339 D-PAK IRLL110