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Vishay Siliconix IRF9Z14PBF-BE3 MOSFET P-CH 60V 6.7A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9Z14PBF-BE3	Tube	1,354		1	1 $1.74 10 $1.74 100 $1.74 1000 $0.53485 10000 $0.43368	Buy Now
Vishay Siliconix IRF9Z14STRLPBF MOSFET P-CH 60V 6.7A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9Z14STRLPBF	Cut Tape	766		1	1 $2.49 10 $1.605 100 $2.49 1000 $2.49 10000 $2.49	Buy Now
	IRF9Z14STRLPBF	Digi-Reel	766		1	1 $2.49 10 $1.605 100 $2.49 1000 $2.49 10000 $2.49	Buy Now
	IRF9Z14STRLPBF	Reel			800	1 - 10 - 100 - 1000 $0.83155 10000 $0.71125	Buy Now
Vishay Siliconix IRF9Z14SPBF MOSFET P-CH 60V 6.7A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9Z14SPBF	Tube	638		1	1 $2.22 10 $2.22 100 $2.22 1000 $0.70663 10000 $0.60475	Buy Now
Bristol Electronics	IRF9Z14SPBF		120			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF9Z14SPBF		96			1 $2.856 10 $2.856 100 $1.428 1000 $1.428 10000 $1.428	Buy Now
Vishay Siliconix IRF9Z14 MOSFET P-CH 60V 6.7A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9Z14	Tube			1,000	1 - 10 - 100 - 1000 $1.43602 10000 $1.43602	Buy Now
Bristol Electronics	IRF9Z14		350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF9Z14		280			1 $2.08 10 $2.08 100 $1.144 1000 $1.04 10000 $1.04	Buy Now
Vishay Siliconix IRF9Z14L MOSFET P-CH 60V 6.7A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9Z14L	Tube			400	1 - 10 - 100 - 1000 $1.08943 10000 $1.08943	Buy Now

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IRF9Z14 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF9Z14	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF9Z14	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-220AB	Original	PDF
IRF9Z14	International Rectifier	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)	Scan	PDF
IRF9Z14	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRF9Z14	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF
IRF9Z14	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF9Z14	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -60V, -6.7A, Pkg Style TO-220AB	Scan	PDF
IRF9Z14	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF9Z14	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
IRF9Z14	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF9Z14L	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRF9Z14L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-262	Original	PDF
IRF9Z14L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF9Z14LPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-262	Original	PDF

IRF9Z14PBF	International Rectifier	HEXFET Power MOSFET ( VDSS = -60V , RDS(on) = 0.50 Ohm , ID = -6.7A )	Original	PDF
IRF9Z14PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-220AB	Original	PDF
IRF9Z14PBF-BE3	Vishay Siliconix	MOSFET P-CH 60V 6.7A TO220AB	Original	PDF
IRF9Z14S	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRF9Z14S	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF9Z14S	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A D2PAK	Original	PDF

IRF9Z14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
f1010 Abstract: No abstract text available Text: PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088	Original	PDF	IRF9Z14PbF 12-Mar-07 f1010
IRF9Z14PBF Abstract: No abstract text available Text: PD - 95628 IRF9Z14PbF • Lead-Free 1 IRF9Z14PbF 2 IRF9Z14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	PDF	IRF9Z14PbF O-220AB O-220AB. IRF9Z14PBF
Untitled Abstract: No abstract text available Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L 2002/95/EC O-263)
Untitled Abstract: No abstract text available Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) - 60 RDS(on) (Ω) VGS = - 10 V 0.50	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L IRF9Z14S/SiHF9Z14S) IRF9Z14L/SiHF9Z14L) O-262) O-263) 12-Mar-07
IRL3103L Abstract: No abstract text available Text: PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free www.irf.com 1 06/08/05 IRF9Z14S/LPbF 2 www.irf.com IRF9Z14S/LPbF www.irf.com 3 IRF9Z14S/LPbF 4 www.irf.com IRF9Z14S/LPbF www.irf.com 5 IRF9Z14S/LPbF 6 www.irf.com IRF9Z14S/LPbF www.irf.com 7 IRF9Z14S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches	Original	PDF	PD-96014 IRF9Z14SPbF IRF9Z14LPbF IRF9Z14S/LPbF IRL3103L
91089 Abstract: IRF9Z14L IRF9Z14S SiHF9Z14S SiHF9Z14S-E3 Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) - 60 RDS(on) (Ω) VGS = - 10 V 0.50	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L IRF9Z14S/SiHF9Z14S) IRF9Z14L/SiHF9Z14L) O-262) 18-Jul-08 91089 IRF9Z14L IRF9Z14S SiHF9Z14S-E3
IRL3103L Abstract: No abstract text available Text: PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free Document Number: 91088 06/08/05 www.vishay.com 1 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 4	Original	PDF	PD-96014 IRF9Z14SPbF IRF9Z14LPbF IRF9Z14S/LPbF IRL3103L
3369 Abstract: AN609 IRF9Z14L IRF9Z14S SiHF9Z14S Text: IRF9Z14S_RC, IRF9Z14L_RC, SiHF9Z14S_RC, SiHF9Z14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRF9Z14S IRF9Z14L SiHF9Z14S SiHF9Z14L AN609, 29-Mar-10 3369 AN609
IRF9Z14 Abstract: No abstract text available Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9Z14, SiHF9Z14 O-220 O-220 18-Jul-08 IRF9Z14
Untitled Abstract: No abstract text available Text: PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088	Original	PDF	IRF9Z14PbF 08-Mar-07
Untitled Abstract: No abstract text available Text: PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free Document Number: 91088 06/08/05 www.vishay.com 1 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 4	Original	PDF	PD-96014 IRF9Z14SPbF IRF9Z14LPbF IRF9Z14S/LPbF
Untitled Abstract: No abstract text available Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9Z14, SiHF9Z14 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9Z14, SiHF9Z14 O-220 O-220 18-Jul-08
Untitled Abstract: No abstract text available Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L 2002/95/EC O-262)

IRF9Z14L Abstract: IRF9Z14S marking 67A Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω	Original	PDF	IRF9Z14S/L IRF9Z14S) IRF9Z14L) IRF9Z14L IRF9Z14S marking 67A
AN609 Abstract: IRF9Z14 Text: IRF9Z14_RC, SiHF9Z14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF9Z14 SiHF9Z14 AN609, 29-Mar-10 AN609
Untitled Abstract: No abstract text available Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)	Original	PDF	IRF9Z14S, SiHF9Z14S IRF9Z14L, SiHF9Z14L 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9Z14, SiHF9Z14 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
IRF9Z14L Abstract: IRF9Z14S Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω	Original	PDF	IRF9Z14S/L IRF9Z14S) IRF9Z14L) IRF9Z14L IRF9Z14S
pj 67 diode Abstract: PJ 63 MM diode IRF9Z14 SAJ 220 Text: PD-9.736 International S Rectifier IRF9Z14 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "60 V ^DS on = 0 -5 0 Q	OCR Scan	PDF	IRF9Z14 O-220 -60Ve pj 67 diode PJ 63 MM diode IRF9Z14 SAJ 220
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	PDF	IRF9Z14/Z15 IRF9Z10/Z12 O-220 IRF9Z10 7Tb4142 00122C
Untitled Abstract: No abstract text available Text: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching	OCR Scan	PDF	0D14R14 IRF9Z14 O-220 55M52
MOSFETs TO-220 Abstract: No abstract text available Text: IRF9Z14/Z15 IRF9Z10/Z12 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros O N Improved Inductive ru gg ed ness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input cap acitance Extended safe operating area	OCR Scan	PDF	IRF9Z14/Z15 IRF9Z10/Z12 O-220 MOSFETs TO-220

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Vishay Siliconix IRF9Z14PBF-BE3

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IRF9Z14 Datasheets (29)

IRF9Z14 Datasheets Context Search

f1010

IRF9Z14PBF

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IRL3103L

91089

IRL3103L

3369

IRF9Z14

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IRF9Z14L

AN609

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IRF9Z14L

pj 67 diode

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MOSFETs TO-220