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Infineon Technologies AG IRF630NL MOSFET N-CH 200V 9.3A TO262
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Infineon Technologies AG IRF630NLPBF MOSFET N-CH 200V 9.3A TO262
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DigiKey	IRF630NLPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

IRF630NL Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRF630NL		Fairchild Semiconductor	N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms		Original	PDF
IRF630NL		International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF630NL with Standard Packaging		Original	PDF
IRF630NL		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF630NL		Transys Electronics	Power MOSFET		Original	PDF
IRF630NLPBF		International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF630NL with Lead Free Packaging		Original	PDF
IRF630NLPBF		International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-262 package		Original	PDF

IRF630NL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ISL 2651 Abstract: 630n Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	PDF	IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n
AN-994 Abstract: IRF630NL IRL3103L Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. AN-994 IRF630NL IRL3103L
AN-994 Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from	Original	PDF	5047A IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. AN-994 IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
IRF630N Abstract: IRF630NL IRF630NS Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω	Original	PDF	94005B IRF630N IRF630NS IRF630NL O-220 AN-994. O-220AB IRF630N) IRF630NS/L) IRF630N IRF630NL IRF630NS
AN-994 Abstract: IRF630N IRF630NL IRF630NS Text: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω	Original	PDF	4005A IRF630N IRF630NS IRF630NL O-220 preferre2-7105 AN-994 IRF630N IRF630NL IRF630NS
IRF630N Abstract: IRF630NL IRF630NS Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω	Original	PDF	94005B IRF630N IRF630NS IRF630NL O-220 AN-994. O-220AB IRF630N) IRF630NS/L) IRF630N IRF630NL IRF630NS
bly 93a Abstract: irf630npbf AN-994 IRF630NL IRL3103L Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. bly 93a irf630npbf AN-994 IRF630NL IRL3103L
630N Abstract: IRF630NS IRF630N IRF630NL Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	PDF	IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 630N IRF630NS IRF630N IRF630NL
IRF630NL Abstract: No abstract text available Text: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET	Original	PDF	IRF630N IRF630NS IRF630NL O-220 IRF630NL
Untitled Abstract: No abstract text available Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω	Original	PDF	94005B IRF630N IRF630NS IRF630NL O-220 AN-994. O-220AB IRF630N) IRF630NS/L)
Untitled Abstract: No abstract text available Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from	Original	PDF	5047A IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994.
IRF620N Abstract: J 115 mosfet IRF630NL IRF630NS TD 1409 Text: IRF630N/NS/NL Power MOSFET VDSS = 200V, RDS on = 0.30 ohm, ID = 9.3 A D G S IRF620N IRF630NS ELECTRICAL CHARACTERISICS at Parameter IRF630NL Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate to Source Leakage Current Min IDSS	Original	PDF	IRF630N/NS/NL IRF620N IRF630NS IRF630NL 160VDC, 10VDC 100VDC, 25VDC, IRF620N J 115 mosfet IRF630NL IRF630NS TD 1409
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter