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    IRF5800

    Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original     		PDF IRF5852PbF IRF5803 IRF5802 IRF5800 IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV

    IRF5852

    Abstract: No abstract text available
    Text: PD - 95261A IRF5852PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A


    Original     		PDF 5261A IRF5852PbF IRF5852

    IRF5800

    Abstract: IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF
    Text: PD - 95261 IRF5852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free HEXFET Power MOSFET VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier


    Original     		PDF IRF5852PbF IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF