IPB120N06S4-H1 Search Results
IPB120N06S4-H1 Price and Stock
Infineon Technologies AG IPB120N06S4H1ATMA2MOSFET N-CH 60V 120A TO263-3 |
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IPB120N06S4H1ATMA2 | Reel | 1,000 |
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IPB120N06S4H1ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB120N06S4H1ATMA2 | 826 |
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IPB120N06S4H1ATMA2 | 902 | 7 |
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IPB120N06S4H1ATMA2 | Cut Tape | 829 | 1 |
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IPB120N06S4H1ATMA2 | 1 |
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IPB120N06S4H1ATMA2 | Cut Tape | 902 |
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IPB120N06S4H1ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB120N06S4H1ATMA1MOSFET N-CH 60V 120A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB120N06S4H1ATMA1 | Reel |
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Infineon Technologies AG IPB120N06S4-H1Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB120N06S4-H1 | 1,000 | 19 |
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IPB120N06S4-H1 | 800 |
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IPB120N06S4-H1 | 1,000 |
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IPB120N06S4-H1 | 31,120 |
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IPB120N06S4-H1 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB120N06S4-H1 |
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Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.0 mOhm; ID (max): 120.0 A; RthJC (max): 0.6 K/W; | Original | |||
IPB120N06S4H1ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO263-3 | Original | |||
IPB120N06S4H1ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO263-3 | Original |