IBM43RF0100
Abstract: Power Transistor 2164
Text: . IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V
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IBM43RF0100
10dBm
OT353
sgrf0100
Power Transistor 2164
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germanium transistor ac 128
Abstract: IBM REV 2.8 IBM43RF0100 IBM43RF0100EV09 SiGe POWER TRANSISTOR GERMANIUM TRANSISTOR SOT-353 Mark va va sot-353 IBM43RF0100EV19 IBMSGRF0100
Text: . IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V • Package: SOT353
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Original
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IBM43RF0100
10dBm
OT353
IBM43RF0100
sgrf0100
germanium transistor ac 128
IBM REV 2.8
IBM43RF0100EV09
SiGe POWER TRANSISTOR
GERMANIUM TRANSISTOR
SOT-353 Mark va
va sot-353
IBM43RF0100EV19
IBMSGRF0100
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D 1413 transistor
Abstract: SiGe POWER TRANSISTOR
Text: I = = = = •= IBMSGRF0100 IBMSGRF0100 EV Advance SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: N Fm in « 0.8dB @ 2.0G H z • Low O perating Voltage • Input IIP3 C apability: * Package: SO T353 ~ + 10dBm @ 2.0G H z, V q q = 2V, lc =5m A
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OCR Scan
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PDF
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IBMSGRF0100
10dBm
sgrf0100
D 1413 transistor
SiGe POWER TRANSISTOR
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IBM43RF0100
Abstract: transistor K 1413
Text: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe
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IBM43RF0100
10dBm
F0100
transistor K 1413
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