UNITED MICROELECTRONICS CORPORATION
Abstract: IBM43RF1111 IBM REV 2.7
Text: . IBM43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Amplifier Features • 0.8 to 2GHz operation for cellular and digital wireless applications • High IIP3 and Low Noise meet demanding system requirements • Low power, single supply 3 volts
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IBM43RF1111
OT23-6
IS-95/IS-98
IS-136.
sgrf1111
UNITED MICROELECTRONICS CORPORATION
IBM REV 2.7
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UHV 806
Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861
Text: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for
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Untitled
Abstract: No abstract text available
Text: I = = = = '= Advance IBM43RF1111 IBM43RF1111 EV SiGe High Dynam ic Range 1900MHz Low Noise A m p lifie r Features • 1.7 G H z/2G H z operation for cellular and digital w ireless applications • Low power, single supply 3 volts • High IIP3 and Low Noise m eet dem anding
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IBM43RF1111
1900MHz
T23-6
1900M
IS-95/IS-98
IS-136.
standaBM43RF1111
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Untitled
Abstract: No abstract text available
Text: IBM43RF1111 Preliminary SiGe High Dynamic Range 800-2000M Hz Low Noise Am plifier Features • 0.8 to 2G H z operation for cellular and digital w ireless applications • High MP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts
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OCR Scan
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PDF
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IBM43RF1111
800-2000M
T23-6
2000M
43RF1111
800-2000MHz
IBMSGRF1111
IBM43RF1111,
IBM43RF1111
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Untitled
Abstract: No abstract text available
Text: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts
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OCR Scan
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PDF
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43RF1111
T23-6
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s122k
Abstract: No abstract text available
Text: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000MHz Low Noise Amplifier Features • 0 .8 to 2G H z operation for cellular and digital wireless applications • Low power, single supply 3 volts • • High IIP3 and Low Noise meet demanding system requirements
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OCR Scan
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PDF
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43RF1111
800-2000MHz
T23-6
-95/IS
IS-136.
s122k
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