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HYM536100M Abstract: No abstract text available Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted	OCR Scan	PDF	HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93
HYM5361 Abstract: HYM536100AMG hym536100 Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling	OCR Scan	PDF	36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100
HYM536100A Abstract: No abstract text available Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling	OCR Scan	PDF	HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4
Untitled Abstract: No abstract text available Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling	OCR Scan	PDF	HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling	OCR Scan	PDF	36-blt HYM536100A 36-bit HY514400A HY531000A 22fiF HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 4b75DÃ
HYM536100 Abstract: HYM536100M HYM536100MG HY531000 sIMM 72 module Text: •HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .22/ i F decoupling capacitor is mounted	OCR Scan	PDF	HYM536100 36-blt 36-bit HY514400 HY531000 HYM536100M HYM536100MG 1CC02-10-M sIMM 72 module
HYM532814 Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2	OCR Scan	PDF	HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
HYM532814 Abstract: TRA8 L HYM536410 HYM532100AM HYM532100 Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .	OCR Scan	PDF	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM 1Mx32 2Mx32 HYM532814 TRA8 L HYM536410 HYM532100AM HYM532100
HYM536100AM Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.	OCR Scan	PDF	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM HYM536A414AM HYM536A414BM HYM532814AM HYM532814BM HYM536100AM HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
HYM536100AM Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina	OCR Scan	PDF	HYM536100A 36-bit HY514400A HY531000A 22uFdecouDlina HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 HYM536100AM HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
HYM536100AM Abstract: No abstract text available Text: » H Y U N D A I H Y M 5 3 6 1 A M - S e r i e s 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5361OOA is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling	OCR Scan	PDF	36-bit HYM5361OOA HY514400A HY531OOOA 22nFdecoupling HYM536100AM/ALM HYM5361OOAMG/ALMG DQ0-DQ35) 1CC04-01-FEB94 HYM536100AM
HY5118160JC Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM	OCR Scan	PDF	HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W