HY5117404C
Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM532414C
4Mx32
4Mx32-bit
HY5117404C
HYM532414CM
HYM532414CMG
72-Pin
DEC-97
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HYM532414BM
Abstract: HY5117404B
Text: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM532414B
4Mx32
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
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HYM532414CM
Abstract: HY5117404C HYM532414C HYM532414CMG HYM532414
Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM532414C
4Mx32
4Mx32-bit
HY5117404C
HYM532414CM
HYM532414CMG
72-Pin
HYM532414
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HYM532414A
Abstract: HY5117404A
Text: HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1§ Þand 0.01§ Þdecoupling are
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HYM532414A
4Mx32-bit
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
1CE13-10-DEC94
72pin
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HYM532414
Abstract: HY5117404
Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted
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HYM532414
32-bit
HY5117404A
HYM532414TNG/SLTNG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
YM532414
HY5117404
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HYM53241
Abstract: No abstract text available
Text: •H Y U N D A I HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72pin glass-epoxy printed circuit board. 0 1nF and 0 01 nFdecoupling capacitors are mounted
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HYM532414B
32-bit
HY5117404B
72pin
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMQBSLMG/BTMG/BSLTMG
HYM532414B
HYM53241
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Untitled
Abstract: No abstract text available
Text: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted
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HYM532414A
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
HYM532414A
Hb75GÃ
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Datasheet-03/HY51174048
Abstract: No abstract text available
Text: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted
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HYM532414B
32-bit
HY5117404B
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMG/BSLMG/BTMG/BSLTMG
HYM532414B
4b75066
Datasheet-03/HY51174048
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Untitled
Abstract: No abstract text available
Text: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF
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4MX32
HYM532414B
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
256ms
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TA 8825 AN
Abstract: 39B4 hyundai HYM532414AM-60 HYM532414AM HYM532414AM60
Text: “HY UNDAI HYM532414A M-Series 4M X 32-bit CMOS DRAM MODULE _ ;_ with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72pin giass-epoxy printed circuit board. 0.1 |iF and 0.01 iiFdecoupling capacitors are mounted
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HYM532414A
32-bit
HY5117404A
PIIona72pinglass-epoxyprintedcircuitboard
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
0-25JMAX
4b75DÃ
TA 8825 AN
39B4
hyundai
HYM532414AM-60
HYM532414AM
HYM532414AM60
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Untitled
Abstract: No abstract text available
Text: - « T U H D A I • HYM532414C M-Series 4MX32 bit EOO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4M x32-bit Extended Data Out mode CMOS DRAM m odule consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01uF
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HYM532414C
4MX32
x32-bit
HY5117404C
532414CM
HYM532414CMG
72-Pin
256ms
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HY5117404
Abstract: HYM532414A
Text: «HYUNDAI HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 532414A is a 4M x 32-bit EDO mode C M O S DRAM module consisting of eight H Y5117404A in 24/26 pin SOJ or TSO PII on a 72 pin glass-epoxy printed circuit board. 0.1* -and 0.01* «decoupling are
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HYM532414A
4Mx32-bit
32414A
32-bit
Y5117404A
532414AM/ASLM/ATM/ASLTM
532414AM
96C94
72pin
HY5117404
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 2 4 1 4 A M -S e r ie s 4Mx32-blt CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 ¡¿F and O.OtnF decoupling are
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4Mx32-blt
HYM532414A
32-bit
HY5117404A
HYM532414AM/
HYM532414AMG/ASLMG/ATMG/ASLTMG
32414A
4Mx32-bit
HYM532414AM
HYM532414ASLM
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Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y M 5 3 2 4 1 4 A 4M X M - S e r ie s 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 uFand 0.01 nF decoupling capacitors are mounted
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32-bit
HYM532414A
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
HYM532414A
1CE13-10-DEC94
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HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
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HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
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HYM532814B
Abstract: No abstract text available
Text: “H Y U N D A I HYM532814B M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 j F and 0.01 (iF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
HYM532814B
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HYM5328104B
Abstract: HYM532814B HYM532810 HYM532814
Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM5328148M/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/B7MG/BSLTMG
100B6
002f3
G0GS47S
HYM532810
HYM532814
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st z7m
Abstract: SO DIMM 72-pin C5401 PI-33
Text: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYMSV64100AN/ATN
HYMSV641OOAX/ATX
1WCHQ11
1CWU351,
st z7m
SO DIMM 72-pin
C5401
PI-33
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Hyundai 2MX32 EDO simm module
Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG
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1Mx16
2Mx32
HYM532224AW/AWG
HYM532224CW/CWG
HYM532214AE/AEG
HYM532214CE/CEG
6G/7Q/80
HYM53241OAM/AMG
HYM53241OCM/CMG
4Mx32
Hyundai 2MX32 EDO simm module
HYM532814
HYM53681
HYM5V72A3204
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
100ffi
004i10*
HYM532814B
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d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
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