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    HX6156 Search Results

    HX6156 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HX6156 Honeywell 256kx1 Static RAM-soi Original PDF
    HX6156-BFC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KBGC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KBHC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KBHT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KEHC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KQGC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KQGT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156KVGT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LBFC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LBFT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LBGT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LBHC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LBHT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LEFC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LQFC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LQFT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LQGC Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LQGT Honeywell 256K x 1 STATIC RAM - SOI Original PDF
    HX6156LQHC Honeywell 256K x 1 STATIC RAM - SOI Original PDF

    HX6156 Datasheets Context Search

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    smd diode marking JCt

    Abstract: HX6156 smd transistor marking A14
    Text: Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Fast Read/Write Cycle Times ≤ 15 ns (Typical) ≤ 25 ns (-55 to 125°C)


    Original     		PDF HX6156 1x106 1x1014 1x109 1x1011 1x10-10 smd diode marking JCt HX6156 smd transistor marking A14

    900-197

    Abstract: smd diode marking JCt HX6156
    Text: Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Fast Read/Write Cycle Times ≤ 15 ns (Typical) ≤ 25 ns (-55 to 125°C)


    Original     		PDF HX6156 1x106 1x1014 1x109 1x1011 1x10-10 900-197 smd diode marking JCt HX6156

    900-197

    Abstract: SMD transistor Marking 1x smd marking WMM
    Text: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6156 24-Lead 28-LeadFlat 900-197 SMD transistor Marking 1x smd marking WMM

    900-197

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106 1x101 1x109 HX6156 24-Lead 28-LeadFlat 900-197

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Leff= 0.6 ^m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10erad 1x101 1x109 HX6156 24-Lead 28-LeadFlat