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    HWF1686YC Search Results

    HWF1686YC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HWF1686YC Hexawave 5.4 W L-band power FET via hole chip Original PDF
    HWF1686YC Hexawave L-Band Power FET Via Hole Chip Original PDF

    HWF1686YC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,


    Original     		PDF HWF1686YC 123456789ABC7DEF7 30dBm 45dBm

    4532 fet

    Abstract: HWF1686YC
    Text: HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 Features Outline Dimensions Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) 650 Description Designed for various RF and Microwave applications,


    Original     		PDF HWF1686YC 30dBm 45dBm 4532 fet HWF1686YC

    57130

    Abstract: 5935-0
    Text: HWF1686YC HSXAWAVS Medium Power GaAs FET September Features 1998 Rev. B O utput Power PidB=30dBm typ. @2.4GHz Outline Drawing High Gain G l= 16dB(typ.)@2.4GHz High Efficiency Unit : £ gn Thickness: 53 \ High Linearity All Bond Pads: r|add =45%(typ.)@2.4GHz


    OCR Scan     		PDF HWF1686YC 30dBm 45dBm HWF1686YC 57130 5935-0