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    HN3C11F Search Results

    HN3C11F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C11F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C11F Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    HN3C11FU Unknown dual NPN transistor Scan PDF
    HN3C11FU Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    HN3C11FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

    HN3C11F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C11F

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C11F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE H N 3 C 1 1 FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11 N3C11

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3ri1Fll • ■ u 'm mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11FU

    HN3C11F

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C11F N3C11F HN3C11F

    HN3C11F

    Abstract: N3C11
    Text: TOSHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C11F N3C11F HN3C11F N3C11