HN3C09F Search Results

HN3C09F Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN3C09F		Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)		Scan	PDF
HN3C09F		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C09FU		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C09FU		Toshiba	NPN Multi-Chip Composite Transistor Pair		Scan	PDF
HN3C09FU(TE85L)		Toshiba	TRANS GP BJT NPN 12V 0.03A 6(2-2J1A) T/R		Scan	PDF

HN3C09F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN3C09FU Abstract: No abstract text available Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C09FU HN3C09FU
HN3C09FU Abstract: No abstract text available Text: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING	OCR Scan	PDF	HN3C09FU N3C09FU HN3C09FU
HN3C09F Abstract: No abstract text available Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO	OCR Scan	PDF	HN3C09F N3C09F HN3C09F
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C09FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C09FU
marking ti Abstract: marking .TI Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	HN3C09FU marking ti marking .TI
transistor marking c3n Abstract: No abstract text available Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage	OCR Scan	PDF	HN3C09F N3C09F transistor marking c3n
HN3C09F Abstract: No abstract text available Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO	OCR Scan	PDF	HN3C09F N3C09F HN3C09F
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	HN3C09F
Untitled Abstract: No abstract text available Text: TO SHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	HN3C09F
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	PDF	HN3C09FU