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    HN29W Price and Stock

    Hitachi Ltd HN29W256H02TE-1

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    Bristol Electronics HN29W256H02TE-1 2,295
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    Renesas Electronics Corporation HN29W256SAH05TE-1

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    Bristol Electronics HN29W256SAH05TE-1 1,678
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    Hitachi Ltd HN29W6484AH03TE-1

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    Bristol Electronics HN29W6484AH03TE-1 319
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    Hitachi Ltd HN29W6411TBV-50

    8M X 8 FLASH 3V PROM, 50 NS, PDSO40
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    Quest Components HN29W6411TBV-50 897
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    Hitachi Ltd HN29W23011T-50

    ELECTRONIC COMPONENT
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    Quest Components HN29W23011T-50 210
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    HN29W Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN29W12811 Hitachi Semiconductor 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) Original PDF
    HN29W12811BP-60 Hitachi Semiconductor Flash Memory, 128Mbit, Sectored, 3.3V Supply, Stacked CSP, 72-Pin Original PDF
    HN29W12811BP-60 Renesas Technology 128M AND type Flash Memory Original PDF
    HN29W12811T-60 Hitachi Semiconductor 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) Original PDF
    HN29W12811T-60 Renesas Technology 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) Original PDF
    HN29W12814ATT-50 Hitachi Semiconductor 128M AND type Flash Memory Original PDF
    HN29W12814ATT-50 Renesas Technology 128M AND type Flash Memory More than 16,057-sector (67,824,768-bit) x 2 Original PDF
    HN29W25611 Hitachi Semiconductor 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W25611ST-80 Hitachi Semiconductor Flash Memory, 256Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    HN29W25611ST-80 Renesas Technology 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W25611T Hitachi Semiconductor 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W25611T-50 Renesas Technology 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W25611T-50H Hitachi Semiconductor 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W25611T-50H Renesas Technology 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Original PDF
    HN29W256H02TE-1 Hitachi Semiconductor Flash Card Controller, Controller For AND Flash Memory Original PDF
    HN29W51214ST-80 Renesas Technology 512M AND type Flash Memory More than 16,057-sector (271,299,072-bit) x 2 Original PDF
    HN29W6411ATT-50 Hitachi Semiconductor Flash, 64M And Type Flash Memory, More than 16, 057-sector (67, 824, 768-Bit) Original PDF
    HN29W6411ATT-50 Renesas Technology 64M AND type Flash Memory More than 16,057-sector (67,824,768-bit) Original PDF
    HN29W6411TT-50 Hitachi Semiconductor Flash, 64M And Type Flash Memory, More than 16, 057-sector (67, 824, 768-Bit) Original PDF
    HN29W64AH05TE-1 Hitachi Semiconductor Flash Card Controller, Controller For AND Flash Memory Original PDF

    HN29W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    o2-a2

    Abstract: Hitachi DSA00196
    Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit ADE-203-870A (Z) Preliminary Rev. 0.1 Mar. 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    Original     		PDF HN29W8411 074-sector 104-bit) ADE-203-870A 51vel o2-a2 Hitachi DSA00196

    AH10T

    Abstract: hn29w12811t-50 Hitachi DSA00170
    Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル


    Original     		PDF HN29W12811 029-sector 984-bit) ADJ-203-551A 50/80ns HN29W12811T-50 HN29W12811T-80 AH10T hn29w12811t-50 Hitachi DSA00170

    hn29w256ah

    Abstract: Hitachi DSA00276
    Text: HN29W256AH03TE-1 Controller for AND Flash Memory ADE-203-1147 Z Preliminary Rev. 0.0 Jan. 27, 2000 Description HN29W256AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured using Hitachi 0.5 µm CMOS technology, and integrates control logic with SH1•CPU core. This IC is able to control maximum 32


    Original     		PDF HN29W256AH03TE-1 ADE-203-1147 HN29W256AH03TE-1 HN29W25611, HN29W25611 hn29w256ah Hitachi DSA00276

    Hitachi Stacked package memory

    Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
    Text: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


    Original     		PDF HN29W16814 074-sector 104-bit) ADE-203-943 84-Mbit HN29W8411) HN29W8411 Hitachi Stacked package memory SA Series HITEC 527 PD513 Hitachi DSA00196

    Hitachi DSA00281

    Abstract: No abstract text available
    Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are


    Original     		PDF HN29W25611 057-sector 072-bit) ADE-203-995C D-85622 Hitachi DSA00281

    HN29W6484ah03

    Abstract: HN29W6484AH03TE-1
    Text: HN29W6484AH03TE-1 Controller for AND Flash Memory ADE-203-988A Z Rev. 1.0 Apr. 16, 1999 Description HN29W6484AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured based on Hitachi 0.5 µm CMOS technology, and integrates control logic with 8 bit micro processor. This IC is able to control


    Original     		PDF HN29W6484AH03TE-1 ADE-203-988A HN29W6484AH03TE-1 HN29W6411A HN29W8411, HN29W8411 HN29W6484ah03

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series Block Diagram Sector address buffer X-decoder 16384 x 512 + 16 × 8 memory matrix Data register (512 + 16) •• I/O0 to I/O7 • • 16057 - 16384 512 + 16 • Multiplexer • Data input buffer • • Input data control • • Y-gating


    Original     		PDF HN29W6411A

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled


    Original     		PDF HN29W25611S 057-sector 072-bit) ADE-203-1233B HN29W25611ST-80 48-pin TFP-48D) Hitachi DSAUTAZ006

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Preliminary Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are


    Original     		PDF HN29W12811BP 029-sector 984-bit) ADE-203-1260 HN29W12811 HN29W12811BP-60 72-bump TBP-72A) Hitachi DSAUTAZ006

    48pin TSOP

    Abstract: HN29W6411 O2-A2 200H HN29W6411TT-50 D512-D527
    Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by


    Original     		PDF HN29W6411 00Max 08Min 18max 20Max 94Max 48pin TSOP O2-A2 200H HN29W6411TT-50 D512-D527

    XTAL 20MHz

    Abstract: Hitachi DSA00276
    Text: HN29W6484DH08TE-1 Controller for AND Flash Memory ADE-203-1158 Z Preliminary Rev. 0.0 Feb. 4, 2000 Description HN29W6484DH08TE-1 is a controller IC for flash ATA card. This IC is manufactured based on Hitachi 0.5 µm CMOS technology, and integrates control logic with 8 bit micro processor. This IC is able to control


    Original     		PDF HN29W6484DH08TE-1 ADE-203-1158 HN29W6484DH08TE-1 HN29W6411A HN29W8411, HN29W8411 XTAL 20MHz Hitachi DSA00276

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HN29W6484AH03TE-1 Controller for AND Flash Memory ADE-203-988A Z Rev. 1.0 Apr. 16, 1999 Description HN29W6484AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured based on Hitachi 0.5 µm CMOS technology, and integrates control logic with 8 bit micro processor. This IC is able to control


    Original     		PDF HN29W6484AH03TE-1 ADE-203-988A HN29W6484AH03TE-1 HN29W6411A HN29W8411, HN29W8411 Hitachi DSA00276

    Hitachi DSA002710

    Abstract: No abstract text available
    Text: HN29W6484AH03TE-1 Controller for AND Flash Memory ADE-203-988 Z Preliminary, Rev. 0.0 Nov. 27, 1998 Description HN29W6484AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured based on Hitachi 0.5 µm CMOS technology, and integrates control logic with 8 bit micro processor. This IC is able to


    Original     		PDF HN29W6484AH03TE-1 ADE-203-988 HN29W6484AH03TE-1 HN29W6411A HN29W8411, HN29W8411 Hitachi DSA002710

    800H

    Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
    Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled


    Original     		PDF HN29W25611T-50H 057-sector 072-bit) ADE-203-1178A HN29W25611T 16nents 800H ADE-203-1178A HN29W25611T-50H sa 2111 Hitachi DSA00358

    Hitachi DSA00174

    Abstract: No abstract text available
    Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


    Original     		PDF HN29W12814A 057-sector 768-bit) ADE-203-944B 64-Mbit HN29W6411A) HN29W6411A Hitachi DSA00174

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by


    OCR Scan     		PDF HN29W6411

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865C (Z) Rev. 1.0 Oct. 20, 1998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		PDF HN29W6411A 057-sector 768-bit) ADE-203-865C b1/06:

    Untitled

    Abstract: No abstract text available
    Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase


    OCR Scan     		PDF HN29WT800/HN29WB800 1048576-word 524288-word 16-bit ADE-203-537 HN29WT800 HN29WB800 8-bit/512-kword

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865D€ (Z) Rev. 21.0 FebQet. 20, 1999K Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		PDF HN29W6411A 057-sector 768-bit) ADE-203-865D 1999K

    MO-142DD

    Abstract: No abstract text available
    Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Senes are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase


    OCR Scan     		PDF HN29WT800 HN29WB800 1048576-word 524288-word 16-bit ADE-203-537A 8-bit/512-kword MO-142DD

    Untitled

    Abstract: No abstract text available
    Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit HITACHI ADE-203-870A (Z) Preliminary, Rev. 0.1 March 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		PDF HN29W8411 074-sector 104-bit) ADE-203-870A

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411 Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-637E (Z) Rev. 5.0 Nov. 14, 1997 Description The Hitachi HN29W6411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		PDF HN29W6411 057-sector 768-bit) ADE-203-637E TTP-48/40D)

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-474 Z HN29W1601 Series 2097152-word x 8-bit CMOS Flash Memory Preliminary H IT A C H I T he H itachi HN29W 1601 is a 2M -word x 8-bit C M O S F la s h M em o ry w ith D IN O R (D iv id ed b itlin e N O R ) type m em ory cells, that realizes programming! and erase capabilities with a single


    OCR Scan     		PDF ADE-203-474 HN29W1601 2097152-word HN29W 95/DDR/MFM M13T037

    HN29W6411

    Abstract: No abstract text available
    Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic program m ing and erase capabilities with a single 3.3V pow er supply. The functions are controlled by


    OCR Scan     		PDF HN29W6411 HN29W