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    HA3669

    Abstract: transistor ha3669 diode marking H2
    Text: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching


    Original     		PDF HA200210 HA3669 HA3669 183oC 217oC 260oC transistor ha3669 diode marking H2

    HA200210

    Abstract: HA3669 ha366 ha2002
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 1/3 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HA200210 HA3669 HA3669 HA200210 ha366 ha2002