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Vishay Intertechnologies RE80GR210J01 Resistor, 210 Milliohm, ? 1%, 120 W, Wirewound, Military Reliability, Threaded - Bulk (Alt: RE80GR210J01)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RE80GR210J01	Bulk		12 Weeks	1	1 $600 10 $169.125 100 $54.95448 1000 $54.95448 10000 $54.95448	Buy Now
Advanced Semiconductor Inc AGR21045EF RF MOSFET Transistors 2.11-2.17GHz 10Watt Gain 14.5dB
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Mouser Electronics	AGR21045EF					1 $51.65 10 $43.89 100 $39.58 1000 $38.17 10000 $38.17	Get Quote
Advanced Semiconductor Inc AGR21030EF RF MOSFET Transistors 2.11-2.17GHz 7Watt Gain 14.5dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR21030EF					1 $54.96 10 $46.71 100 $43.62 1000 $43.62 10000 $43.62	Get Quote
Advanced Semiconductor Inc AGR21090EF RF MOSFET Transistors 2.11-2.17GHz 19Watt Gain 14.5dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR21090EF					1 $76.43 10 $64.96 100 $60.39 1000 $60.39 10000 $60.39	Get Quote
PanJit Semiconductor UF100G_R2_10001 Rectifiers 50V Ultra Fast Recovery Rectifiers 1A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	UF100G_R2_10001					1 - 10 - 100 - 1000 - 10000 $0.027	Get Quote
NAC	UF100G_R2_10001				5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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GR210 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AGR19045XF Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045EF Hz--1990 AGR19045XF	PDF
AGR21030EF Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A Text: GR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A	PDF
SSD1963 Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41 Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com	Original	SSD1963 1215KB SSD1963 21-Nov-08 08-Dec-08 24-Nov-08 2002/95/EC SSD1963QL9 SSD1963 16 bit SSD1963G41	PDF
J964 Abstract: AGR21045EF AGR21045XF JESD22-C101A Text: Data Sheet GR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A	PDF
CDM 03 Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A Text: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19045EF Hz--1990 AGR19045EF carGR19045EF AGR19045XF 21045F 12-digit CDM 03 AGR19045XF CDR33BX104AKWS JESD22-C101A	PDF
21045F Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045E AGR26045EU AGR26045EF AGR26045Eerican DS04-110RFPP 21045F	PDF
21045F Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645 Text: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045EF AGR26045EF ACGR26045EF AGR26045XF 21045F 12-digit 21045F J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645	PDF
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf Text: Data Sheet May 2004 GR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The GR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045EF	PDF
RF POWER MOSFET Abstract: J605 amphenol 24- 28 pf Text: Preliminary Data Sheet June 2004 GR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030EF RF POWER MOSFET J605 amphenol 24- 28 pf	PDF
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-C101A Text: Preliminary Data Sheet May 2004 GR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The GR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A	PDF
RAW MATERIAL SPECIFICATION SHEET Abstract: No abstract text available Text: Rev B Date ÜEScripimn By 04/34/31 JSC GENERAL UPDATE 29.88±0.25 [1.176±.010] TABLE 1 - DIMENSIONS PART NUMBER GR210 - 00- 400 GR210—00—410 GR210—00—420 D raw n by; L ±0.30 [.012] 2.00 r.079] 2.54 r.1001 3.05 [.120] Date; J CACHINA 01/16/01 Lin u^]	OCR Scan	GR210 GR210--00--410 GR210--00--420 S20100 GR210-00-4 5M--1994 GR210-00-4-- RAW MATERIAL SPECIFICATION SHEET	PDF
RAW MATERIAL SPECIFICATION SHEET Abstract: S2-0023 Text: DesmptTan D GENERAL UPDATE Date By 04/M/H ßC 17.26+0.25 [.680+.010] ACCEPTS 1.60±0.07 29.88±0.25 [1.176±.010] Rev [.063± .003] DEVICE 5.70 [.224] L f PRE—DEPOSITED SOLDER 8c FLUX 1.90 [.075] 4 > 2.48 [.098] 3 > 1.98 [.078] 10.44 [.411] TYP 1.905 [.0750]	OCR Scan	04/M/H GR210-00-40D GR210--00--41D GR210--00--42D S20023 RAW MATERIAL SPECIFICATION SHEET S2-0023	PDF
Untitled Abstract: No abstract text available Text: Doaipiim fifí ncnm oua c w Osle i» •Ä * JSC 3 4 .5 2 ± 0 .2 5 [1 .3 5 9 ± .0 1 0 ] ACCEPTS 1.6 0 ±0 .0 7 [,0 6 3 ± .0 0 3 ] DEVICE 5 .7 0 [.2 2 4 ] 1 8 .9 7 ± 0 .2 5 [,7 4 7 ± .0 1 0 ] r 9.8 5 [.3 8 8 ] PRE-DEPOSITED SOLDER & FLUX 1.90 [.0 7 5 ]	OCR Scan	GR210 S20023	PDF