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LGS GM76C256BLLFW70
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	GM76C256BLLFW70		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
lgs GM76C256BLLFW70 32K X 8 STANDARD SRAM Standard SRAM, 32KX8, 70ns, CMOS, PDSO28
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	GM76C256BLLFW70		1,064			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GM76C256B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
fe 1.1s Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02 Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low	Original	GM76C256B 55/70/E GM76C256BL/BLL 450mil) 55/70/85ns CS250 fe 1.1s GM76C512 a 683 transister GM76 GM76C5 cs25-02	PDF
GM76C256B Abstract: No abstract text available Text: LG Semicon Co.,Ltd. GM76C256BL/BLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256BL/BLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology and operated from a single 2 7V to 5.5V supply.	OCR Scan	GM76C256BL/BLL-W 28-pin 600mil) 480mil) GM76C256BL/BLL-W GM76C256B	PDF
GM76C256B Abstract: No abstract text available Text: LG Semicon Co.,Ltd. Description GM76C256BL/BLL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle	OCR Scan	GM76C256BL/BLL GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 450mil)	PDF
Untitled Abstract: No abstract text available Text: GoldStar GM76C256BL/BLL 32,768 W ORDSx 8 BIT GOLDSTAR ELECTRON CO., LTD. CMOS STATIC RAM Description Pin. Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8/mi advanized CMOS technolo	OCR Scan	GM76C256BL/BLL GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 330mil)	PDF
GM76C256B Abstract: GM76C256BLL 22-VCS lg power supply diagram Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low	OCR Scan	GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 450mil) 55/70/85ns 55mWMax. GM76C256BLL 22-VCS lg power supply diagram	PDF
GM71C18160AJ7 Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15 Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl \|- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I	OCR Scan	GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15	PDF
4170A Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264 Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL	OCR Scan	GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264	PDF
GM76C88AL FW Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8 Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20	OCR Scan	GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8	PDF
GM76C256all Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410 Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60	OCR Scan	GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410	PDF
GM71C4400BJ70 Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256 Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80	OCR Scan	71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256	PDF