VS-GB75DA120UP
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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Original
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PDF
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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PDF
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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PDF
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
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gb75da120up
Abstract: transistor d 1680 ultrafast igbt
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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PDF
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GB75DA120UP
OT-227
E78996
2002/95/EC
18-Jul-08
gb75da120up
transistor d 1680
ultrafast igbt
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
|
Original
|
PDF
|
GB75DA120UP
OT-227
2002/95/EC
OT-227
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
|
Original
|
PDF
|
GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
|
GB75DA120UP
Abstract: IGBT 75 D
Text: GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
|
PDF
|
GB75DA120UP
OT-227
2002/95/EC
18-Jul-08
GB75DA120UP
IGBT 75 D
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
|
Original
|
PDF
|
VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
|
