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    FQI55N10 Search Results

    FQI55N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI55N10 Fairchild Semiconductor 100 V N-Channel MOSFET Original PDF

    FQI55N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB55N10

    Abstract: FQI55N10
    Text: FQB55N10 / FQI55N10 October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB55N10 FQI55N10 FQI55N10

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 N-Channel MOSFET D D ! " G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous TC = 25°C Drain Current IDM Drain Current VGSS


    Original     		PDF FQB55N10 FQI55N10

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB55N10 FQI55N10 FQI55N10

    FQB55N10

    Abstract: FQI55N10
    Text: FQB55N10 / FQI55N10 August 2000 QFET TM FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB55N10 FQI55N10 130ice. FQI55N10

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB55N10 FQI55N10 FQI55N10

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 August 2000 QFET TM FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB55N10 FQI55N10 FQI55N10 FQI55N10TU O-262

    Untitled

    Abstract: No abstract text available
    Text: FQB55N10 / FQI55N10 August 2000 QFET TM FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB55N10 FQI55N10 FQB55N10TM O-263

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A