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    fujitsu l-band power fets

    Abstract: No abstract text available
    Text: Filinoli J FLL17IME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1c|B=32.5dBnn Typ. High Gain: G-|C|g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL171ME is a Power GaAs FET that is specifically designed to


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