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    Rochester Electronics LLC FDP4030L

    N-CHANNEL POWER MOSFET
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    DigiKey FDP4030L Bulk 410
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    Fairchild Semiconductor Corporation FDP4030L

    FDP4030L - 20A, 30V, 0.035ohm, N-Channel Power MOSFET, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDP4030L 6,570 1
    • 1 $0.7042
    • 10 $0.7042
    • 100 $0.6619
    • 1000 $0.5986
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    FDP4030L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP4030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDP4030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDP4030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDP4030L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDP4030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    FDP4030L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDB4030L

    Abstract: FDP4030L
    Text: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF FDP4030L FDB4030L FDB4030L

    m 9835

    Abstract: CBVK741B019 EO70 F63TNR FDB4030L FDP4030L FDP7060 L86Z NDP4060L 9852
    Text: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    Original     		PDF FDP4030L FDB4030L O-263AB/D2PAK O-263AB/D2PAK m 9835 CBVK741B019 EO70 F63TNR FDB4030L FDP7060 L86Z NDP4060L 9852

    FDB4030L

    Abstract: FDP4030L
    Text: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    Original     		PDF FDP4030L FDB4030L FDB4030L

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


    Original     		PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D S E M IC O N D U C T O R March 1998 m FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel en hance m en t m ode 1 po w e r field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L

    Untitled

    Abstract: No abstract text available
    Text: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L

    Untitled

    Abstract: No abstract text available
    Text: March 1998 F A IR C H IL D SEM IC ONDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L P4030L

    FDB4030L

    Abstract: FDP4030L
    Text: March 1998 FAIRCHILD S E M I C O N D U C T O R TM FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L FDB4030L