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    onsemi FDA24N50F

    Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P(N) - Rail/Tube (Alt: FDA24N50F)
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    Aptina Imaging FDA24N50F

    Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P Tube
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    FDA24N50F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDA24N50F Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 24A TO-3 Original PDF

    FDA24N50F Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDA24N50F N-Channel UniFETTM FRFET MOSFET 500 V, 24 A, 200 mΩ Features Description • RDS on = 166 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDA24N50F 100nsec 200nsec

    FDA24N50F

    Abstract: No abstract text available
    Text: FDA24N50F N-Channel UniFETTM FRFET MOSFET 500 V, 24 A, 200 m Features Description • RDS on = 166 m (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDA24N50F FDA24N50F 100nsec 200nsec FDA20N50F

    FDA24N50F

    Abstract: No abstract text available
    Text: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA24N50F FDA24N50F

    FDA24N50F

    Abstract: mj 4310
    Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA24N50F FDA24N50F mj 4310

    fda24n50f

    Abstract: A1872 ir 4310
    Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA24N50F FDA24N50F A1872 ir 4310

    interleaved Boost PFC

    Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
    Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is


    Original     		PDF AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50