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Untitled Abstract: No abstract text available Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220
F10F35VX2 Abstract: 2SK2799 Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220 Singl001 F10F35VX2 2SK2799
2sk2799 Abstract: F10F35VX2 mosfet 350v 10A Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220 Aval001 2sk2799 F10F35VX2 mosfet 350v 10A
Untitled Abstract: No abstract text available Text: Power 1. Absolute Maximum Ratings MOS F E T Specification Te = 2 5 X 3 Item Symbol Condition Storage Temperature T i ti Channel Temperature Tch 15 0 Drain-Source Voltage V dss 3 5 0 Gate-Sourse Voltage V ±3 0 Drain Current (DC) ID 10 (Peak) I DP 3 0 IS	OCR Scan	PDF	2SK2799 DD02730 2SK2799