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    Renesas Electronics Corporation LDS6003PYGI

    IC SENSOR TCH PURETOUCH 28SSOP
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    Renesas Electronics Corporation LDS6003PYGI8

    IC SENSOR TCH PURETOUCH 28SSOP
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    DS6003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRD4460V22

    Abstract: No abstract text available
    Text: DRD4460V22 Rectifier Diode DS6003 – 1 March 2011 LN28190 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 4460A 56400A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD4460V22 DRD4460V20


    Original     		PDF DRD4460V22 DS6003 LN28190) 6400A DRD4460V20 DRD4460V18 DRD4460V16 DRD4460V22

    Untitled

    Abstract: No abstract text available
    Text: DRD4460V22 Rectifier Diode DS6003 – 1 March 2011 LN28190 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 4460A 56400A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD4460V22 DRD4460V20


    Original     		PDF DRD4460V22 DS6003 LN28190) 6400A DRD4460V20 DRD4460V18 DRD4460V16 DRD4460V22

    Untitled

    Abstract: No abstract text available
    Text: P/N: T-11-1250-X3-XXX-X-XX PIN-TIA Receiver Modules-Receptacle & Pigtailed 3.3V Features z z z z z InGaAs/InP PIN Photodiode with trans-impedance amplifier High Sensitivity with AGC* Differential ended output Single +3.3V operation -40~85°C operating temperature


    Original     		PDF T-11-1250-X3-XXX-X-XX 25Gbps DS-6003

    FAN5250

    Abstract: Mobile Duron PackagePin FAN4855 FAN5037 FAN5038 FAN5059 FAN5660 FAN6555 ILC6363
    Text: Analog and Mixed Signal Output Current A (Min) (V) (Max) (V) Application Type Modulation Light Load PFM Mode PWM Outputs (V) (Min) (V) (Max) (V) HS-Output RDS (VON) (mOhm) LS-Output RDS (VON) (mOhm) Frequency Range (KHz) Output Accuracy ±% Vout Package


    Original     		PDF FAN4855 FAN5660 FAN6555 ILC6363 VRM9/10 VRM9/10) QSOP-24 FAN5240 FAN5063 DS600240 FAN5250 Mobile Duron PackagePin FAN4855 FAN5037 FAN5038 FAN5059 FAN5660 FAN6555 ILC6363

    DS60037

    Abstract: 28C64B-25 28C64B M/28C64B
    Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation


    OCR Scan     		PDF 28C64B 28C64B DS11120A-7 120ns 150ns 200ns 250ns DS60037 28C64B-25 M/28C64B

    F91300 MASSY

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation


    OCR Scan     		PDF blD32Dl 000b514 150ns 10OnA DS11125C-8 F91300 MASSY

    Untitled

    Abstract: No abstract text available
    Text: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C16A 150ns 100nA DS11125C-6 11125C 28C16AF DS11125C-8 200ns

    Untitled

    Abstract: No abstract text available
    Text: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


    OCR Scan     		PDF 150ns --30mA 100nA 200ns --32-Pin DS11125A-6 28C16A 28C16AF 200ns DS11125A-8

    28C256B

    Abstract: EEPROM 28C256 28C256 microchip
    Text: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times


    OCR Scan     		PDF 250ns 150nA 64-Byte DS11116C-7 28C256 28C256- 120ns 150ns 200ns 28C256B EEPROM 28C256 28C256 microchip

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C17A 150ns 200ns 28C17A DS11127C-7 28C17AF 200ns

    Untitled

    Abstract: No abstract text available
    Text: & M ic ro c h ip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS 16K x 16 (256K) Programmable Read Only Memory. • High speed performance — 45ns Maximum access time


    OCR Scan     		PDF 27HC1616 40-Pin 44-Pin DS11010C-7 27HC1616 DS11010C-8

    27HC416

    Abstract: No abstract text available
    Text: & 27HC416 M icrochip 64K 4K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance — 45ns Maximum access time • CMOS Technology for low power consumption — 90mA Active current — 100(iA Standby current (low power option)


    OCR Scan     		PDF 27HC416 40-Pin 44-Pin DS11013A-6 DS11013A-7 27HC416 27HC416L DS11013A-8

    26c64

    Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
    Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times


    OCR Scan     		PDF 28C64B 250ns 64-Byte DS11120A-7 bl03S01 28C64B_ T-46-13-27 28C64B- 120ns 150ns 26c64 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64

    Untitled

    Abstract: No abstract text available
    Text: H1H T tU MIC ROCHIP TECHNOLOGY INC S2E D • blD32Dl QOQHflBL 1 ■ T -^ k -a -z 1» 27HC416 64K 4K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance — 45ns Maximum access time


    OCR Scan     		PDF blD32Dl 27HC416 DS11013A-7 blQ32Q1 DS11013A-8

    Untitled

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation


    OCR Scan     		PDF 28C64B 250ns 64-Byte DS11120A-7 blQ3E01 28C64B_ 28C64B- DS11120A-8 120ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: & 28C17A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C17A is a CMOS 16K non-volatile electrically Erasable and Programm able Read Only Memory. The 28C17A is accessed like a


    OCR Scan     		PDF 28C17A 28C17A 28C17AF 26C17A