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    DS442X Search Results

    DS442X Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS442X Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    DS442X Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    DS442X Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    DS442X Unknown Cross Reference Datasheet Scan PDF
    DS442X Sanyo Semiconductor 130mA Iout, 55V Vrrm General Purpose Silicon Rectifier Scan PDF
    DS442X Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF

    DS442X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DS442X Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current130m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage55 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600m V(FM) Max.(V) Forward Voltage.65 @I(FM) (A) (Test Condition)1.5m @Temp. (øC) (Test Condition)


    Original     		DS442X Current130m Voltage55 PDF

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385 PDF

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385 PDF

    2SD808

    Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


    Original     		ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    DARLINGTON POWER PACK STK-0060

    Abstract: STK power amplifier 2145 DARLINGTON POWER PACK STK-0059 stk 3076 STK 033 STKOO39 0070-II 0050II LT 4006 stk 2230
    Text: ,:a? \Features Generaloutput stage of power amplifier has a difficult and complex problem about heat sink designingand its setting.Sanyo'sD.P.P.intends to decreaseelectronic parts and rationalizea manufacturingprocessby designinglC of only output stageof poweramplifier.


    Original     		8250II, 8260II. 8280II STK3O56 DARLINGTON POWER PACK STK-0060 STK power amplifier 2145 DARLINGTON POWER PACK STK-0059 stk 3076 STK 033 STKOO39 0070-II 0050II LT 4006 stk 2230 PDF

    DO-151

    Abstract: DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x
    Text: DIODES, THYRISTORS, SENSO High-speed Switching Diodes Plastic-package Diodes Device l0 A Vr <V) Package type 0.10 80 MCP2 DCF010 0,10 so DCG010 0.10 80 D S E 01 0* Features Device Single DCA015 MCP Com m on anode DCB015 MCP Com m on cathode DSA015 10 (A)


    OCR Scan     		DCF010 DCG010 DCH010 DCJ010 DCF015 DCG015 DSE015 DSH015 DCB010 DCC010 DO-151 DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x PDF

    2SB608

    Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
    Text: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications I2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan     		2SB808/2SD1012 I2SB808 2SB608 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60 PDF

    DCC010

    Abstract: DO-35 C3 gmb01 MARKING cp6
    Text: SA0YO Q u i c k G u i d e To Small ole Ver-y Rast Swi t c h l n g Type No. Remarks :Marking High withstand Voltage Electrical Characteristics/Ta-251C Package No. General purpose VR 10 (V) (mA) (mA) IF (mA) max (V) IR max VR (V) (ßV trr max (ns) IF (mA)


    OCR Scan     		Characteristics/Ta-251 DS442X GMA01 GMB01 DS446 DS462 GMA01U GMB01U GMA02 DS441 DCC010 DO-35 C3 MARKING cp6 PDF

    DIODE S4 29

    Abstract: No abstract text available
    Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


    OCR Scan     		PDF

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


    OCR Scan     		A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 PDF

    DSB010

    Abstract: DS442X
    Text: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)


    OCR Scan     		Do-35 Do-34 Do-34S LL-34 DSB010 DS442X PDF