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    DS1225Y Search Results

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    DS1225Y Price and Stock

    Maxim Integrated Products DS1225Y-150-

    IC NVSRAM 64KBIT PARALLEL 28EDIP
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    DigiKey DS1225Y-150- Tube 36
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    • 100 $15.21278
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    Rochester Electronics LLC DS1225Y-170-

    DS1225 64K NONVOLATILE SRAM
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    DigiKey DS1225Y-170- Bulk 27
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    Maxim Integrated Products DS1225Y-170-

    IC NVSRAM 64KBIT PARALLEL 28EDIP
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    DigiKey DS1225Y-170- Bulk
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    Maxim Integrated Products DS1225Y-200-

    IC NVSRAM 64KBIT PARALLEL 28EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1225Y-200- Tube 36
    • 1 -
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    • 100 $15.58694
    • 1000 $15.58694
    • 10000 $15.58694
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    Maxim Integrated Products DS1225Y-200IND-

    IC NVSRAM 64KBIT PARALLEL 28EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1225Y-200IND- Tube 36
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    • 100 $16.03528
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    Find more DS1225Y price and stock on Findchips.com

    DS1225Y Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1225Y Dallas Semiconductor 64K Nonvolatile SRAM Original PDF
    DS1225Y Maxim Integrated Products 64K Nonvolatile SRAM Original PDF
    DS1225Y-100 Dallas Semiconductor 64K Nonvolatile SRAM Scan PDF
    DS1225Y-120 Dallas Semiconductor 64K Nonvolatile SRAM Scan PDF
    DS1225Y-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    DS1225Y-150 Dallas Semiconductor 64K Nonvolatile SRAM Original PDF
    DS1225Y-150 Maxim Integrated Products NVRAM, 64K Non-Volatile SRAM Original PDF
    DS1225Y-150+ Maxim Integrated Products 64K Nonvolatile SRAM Original PDF
    DS1225Y-150 Dallas Semiconductor 64K Nonvolatile SRAM Scan PDF
    DS1225Y-150 Dallas Semiconductor 64K Nonvolatile SRAM Scan PDF
    DS1225Y-150-IND Dallas Semiconductor 64K Nonvolatile SRAM Original PDF
    DS1225Y-150IND Maxim Integrated Products 64K Nonvolatile SRAM Original PDF
    DS1225Y-150IND Maxim Integrated Products 64k Nonvolatile SRAM Original PDF
    DS1225Y-150-IND Maxim Integrated Products NVRAM, 64K Non-Volatile SRAM Original PDF
    DS1225Y-150IND+ Maxim Integrated Products 64K Nonvolatile SRAM Original PDF
    DS1225Y-170 Dallas Semiconductor 64K Nonvolatile SRAM Original PDF
    DS1225Y-170 Maxim Integrated Products NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-Pin Original PDF
    DS1225Y-170+ Maxim Integrated Products 64K Nonvolatile SRAM Original PDF
    DS1225Y-170 Dallas Semiconductor 64K Nonvolatile SRAM Scan PDF
    DS1225Y-170-IND Dallas Semiconductor 64K Nonvolatile SRAM Original PDF

    DS1225Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS1225Y

    Abstract: No abstract text available
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 24-Pin 720-mil A0-A12 150ns 170ns

    DS1225Y

    Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864

    EEPROM 2864

    Abstract: 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM DS1225Y EEPROM 2864 CMOS DS1225
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y EEPROM 2864 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM EEPROM 2864 CMOS DS1225

    2864 eeprom

    Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
    Text: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1225Y 28-pin 24-Pin 720URE DS1225Y-150 DS1225Y-150+ DS1225Y-150IND DS1225Y-150IND+ DS1225Y-170 DS1225Y-170+ 2864 eeprom DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT

    DS1225Y

    Abstract: DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200

    DS1225Y-200

    Abstract: DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y-200 DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225

    DS1225Y

    Abstract: DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864

    2864 eeprom

    Abstract: 2764 eprom DS1225Y Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN 2864 eeprom 2764 eprom Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram

    2764 eprom PINOUT

    Abstract: dallas ds1225y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full +10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y 28-PIN 28-PIN 2764 eprom PINOUT dallas ds1225y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200

    EEPROM 2864

    Abstract: DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND mdt28 EEPROM 2864 CMOS 2864 eeprom
    Text: 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		PDF DS1225Y 28-pin MDT28 EEPROM 2864 DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND EEPROM 2864 CMOS 2864 eeprom

    DS1425L-F5

    Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC


    Original     		PDF DS0621 DS0630 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1425L-F5 rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 150ns, 170ns, 200ns 28-pin 0S1225Y DS1225Y 28-PIN

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 28-pin DS1225Y 28-PIN

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 • Data is automatically protected during power loss • Low-power CMOS VCC A12 | 2 27 1 WE A7 1 3 26 1 NC A6 1 4 25 1 A8 A5 1 5 « A9


    OCR Scan     		PDF DS1225Y 28-pin Vcc11. DS1225Y 28-PIN

    DS1225Y

    Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
    Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc


    OCR Scan     		PDF DS1225Y 28-pin 228-PIN 28-PIN DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC f i 1 28 g VCC A12 1 2 27 § WE A7 1 3 26 g NC A6 1 25 g


    OCR Scan     		PDF DS1225Y 2bl413D DS1225Y 28-PIN 2bl4130

    2864 eeprom

    Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
    Text: DS1225Y DALLAS DS1225Y SEMICONDUCTOR 6 4 K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 - 1 A12 1 • Data is automatically protected during power loss A7 • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 28-pin DS1225Y 2864 eeprom EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS

    dallas ds1225y

    Abstract: dallas ds 1225y EEPROM 2864 DS1225Y DS1225Y-150 2764 EEPROM DS1225 DS1225Y-170 DS1225Y-200 EEPROM 2864 CMOS
    Text: DS 1225Y DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 28-pin A0-A12 DS1225Y 28-PIN dallas ds1225y dallas ds 1225y EEPROM 2864 DS1225Y-150 2764 EEPROM DS1225 DS1225Y-170 DS1225Y-200 EEPROM 2864 CMOS

    HM6264ALP-10

    Abstract: STATIC RAM 6264 FCB61C65-70 HM6264AP-15 HY6264 RAM HY62C64-55 HY62C64-70 DPS9264-120 DPS9264-150 DS1225AB-15
    Text: - 86 - m DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 DS1225AD-15 DS1225AD-2G DS1225Y-15 DS1225Y-20 EDI8810H-100 EDI8810H-120 EDI8810IM50 EDI8810H-55 EDI8810H-70 EDI8810H-85 EDI8810L-Î00 ED18810L-120 EDI8810L-150 EDI8810L'55 EDI8810L-70 EDI88101.-85 FCB61C65'45


    OCR Scan     		PDF 28PIN DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 DALHY62C64L-45 HY62C64L-55 HYB2C64L-70 HY6264-10 HY6264-12 HM6264ALP-10 STATIC RAM 6264 FCB61C65-70 HM6264AP-15 HY6264 RAM HY62C64-55 HY62C64-70

    ds1226y

    Abstract: Ram 2864 DS1225Y-100 DS1225V 2864 EEPROM DS122SY EEPROM 2864 DS1225Y 2864 EEPROM 28 PINS 2bl42
    Text: DALLAS SEMICONDUCTOR CORP 3^E D Sbl413Q 00033^0 M « D A L DS1225Y DALLAS S E M IC O N D U C T O R DS1225Y 64K Nonvolatile SRAM x if f + ilb e Ÿ & t f r 's r FEATURES PIN DESCRIPTION • Data retention in the absence of Voc • Data Is automatically protected during power


    OCR Scan     		PDF Sbl413Q ds1225y DS1225Y 28-pin 100ns, 120ns, 150ns, 170ns, 200ns DS1225V ds1226y Ram 2864 DS1225Y-100 2864 EEPROM DS122SY EEPROM 2864 2864 EEPROM 28 PINS 2bl42

    IC 2864 eeprom

    Abstract: dallas ds 1225y dallas ds1225y ic 2864 eprom DS1225Y
    Text: DS1225Y DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V c c NC 1 •-J VCC ro 1 A7 | 3 26 | NC A12 • Directly replaces 8K x 8 volatile static RAM or EEPROM 28 1 • I • Data is automatically protected during power loss


    OCR Scan     		PDF DS1225Y 28-pin Vcc11. DS1225Y IC 2864 eeprom dallas ds 1225y dallas ds1225y ic 2864 eprom

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC I NC * 25 1 AS 24 1 A9 • Over 10 years of data retention • Standard 28-pin JEDEC pinout • Available in 150ns, 170ns, or 200ns read access


    OCR Scan     		PDF 28-pin 150ns, 170ns, 200ns DS1225Y DS1225Y

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 1 A12 | A7 | 28 1 VCC 2 27 1 WE 3 26 1 NC A6 | 4 25 1 A6 A5 | 5 24 1 A9 A4 1 6 23 1 A11 • Low-power CMOS A3 1


    OCR Scan     		PDF 28-pin DS1225Y psi225ln DS1225Y

    FCB61C65-70

    Abstract: HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DPS9264-120 DPS9264-150 DS1225Y DS1225AB-20
    Text: - 86 - m £ ít % CC TAAC max ns) TCAC max (ns) 6 4 K CMOS X + A TOE max (ns) TOH min (ns) V TOD (ns) '/ S t a t i c RAM (81 9 2 X 8 ) Í# f t TiP min (ns) TDS min (ns) m TDH min (ns) TWD min (ns) TWR ma): (ns) V D D or V C C (V) 2 8 P I N ÎDD max (mA)


    OCR Scan     		PDF 28PIN DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 HM6264AFP-12 HM6264AFP-15 HM6264ALFP-10 HM6264ALFP-12 HM6264A1FP15 FCB61C65-70 HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DS1225Y