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    BFR29

    Abstract: mosfet vn 10
    Text: 7110â2b DQb7b21 a?T • P H I N BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope w ith the substrate connected to the case. It is intended fo r linear applications in the audio as well as the i.f. and v.h.f. frequency region, and in


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    DDb7b21 BFR29 BFR29 mosfet vn 10 PDF