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    Infineon Technologies AG CY7C197BN-15VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    Infineon Technologies AG CY7C197BN-25PC

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    CY7C197BN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C197BN Cypress Semiconductor 256 Kb (256K x 1) Static RAM Original PDF
    CY7C197BN-12VC Cypress Semiconductor 256 Kb (256K x 1) Static RAM Original PDF
    CY7C197BN-15VC Cypress Semiconductor 256 Kb (256K x 1) Static RAM Original PDF
    CY7C197BN-15VCT Cypress Semiconductor 256 Kb (256K x 1) Static RAM; Density: 256 Kb; Organization: 256Kb x 1; Vcc (V): 4.5 to 5.5 V; Original PDF
    CY7C197BN-25PC Cypress Semiconductor 256 Kb (256K x 1) Static RAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb CY7C197BN 24-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb 24-pin CY7C197BN

    CY7C197BN

    Abstract: CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691
    Text: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ


    Original     		PDF CY7C197BN 24-lead CY7C197BN CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb CY7C197BN 24-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kbit 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kbit 256-Kb 24-pin CY7C197BN

    CY7C197BN

    Abstract: CY7C197BN-15VC CY7C197BN-25PC
    Text: CY7C197BN 256 Kb 256K x 1 Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs ■ Available in 24-lead DIP and 24-lead SOJ


    Original     		PDF CY7C197BN CY7C197BN 24-lead CY7C197BN-15VC CY7C197BN-25PC

    1709 013

    Abstract: CY7C197BN CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC
    Text: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ


    Original     		PDF CY7C197BN 24-lead CY7C197BN 1709 013 CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256 Kb 256 K x 1 Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs ■ Available in 24-lead DIP and 24-lead SOJ


    Original     		PDF CY7C197BN CY7C197BN 24-lead