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Catalog Datasheet	MFG & Type	PDF	Document Tags
T0T7250 Abstract: FS1N Text: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables	OCR Scan	PDF	TCD6162AU TC6162AU TCH72S0 Q051S44 QFP44-P-1010A T0T7250 FS1N
AD2033 Abstract: No abstract text available Text: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.	OCR Scan	PDF	TLP795G TLP795G) TLP795G 150mA 5000Vrm AD2033
P161j Abstract: No abstract text available Text: TLP161J GaAs IRED & PHOTO-TRIAC TIP161J TRIAC DRIVE U n it in m m PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY T he TOSHIBA M INI FLAT COUPLER T L P161J is a sm all outline coupler, suitable for surface m ount assem bly. The T LP161J consists of a photo triac, optically coupled to a gallium	OCR Scan	PDF	TLP161J TIP161J) P161J LP161J 2500Vrm UL1577, E67349 11-4C3 CH725
Untitled Abstract: No abstract text available Text: TOSHIBA TLRD262 LED Lamp Unit in mm GaAIAs Red Light Emission Panel Circuit Indicator p Z J j± a 2 Tl rb 3mm Diameter T1-3/4 • G aA IA s Red L E D • All Plastic Mold Type • Colorless Transparent Lens • Low Drive Current, High Intensity Red Light Em ission	OCR Scan	PDF	TLRD262 D17ESD CH7250
Untitled Abstract: No abstract text available Text: YoSHÎBÂTCDÎSCRETE/0PT0ï 9097250 TOSHIBA » F \| ci m ? E S D <DISCRETE/OPTO ' 5 6 C 07 7T 5 0D0773S " 0 yC 5 3 3-/3 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS.	OCR Scan	PDF	0D0773S 0250M
2SK1913 Abstract: transister 2SK191 Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance	OCR Scan	PDF	2SK1913 100mA 20kii) 2SK1913 transister 2SK191
Untitled Abstract: No abstract text available Text: TIM1414-15 FEATURES : • H IG H PO W ER ■ B R O A D B A ND IN TERNA LLY M A T C H E D ■ H ER M ETIC A LLY SEALED PACKAGE P1dB = 42.0 dBm at 14.0 G H z to 14.5 GHz ■ H IG H G AIN G 1dB = 6.0 dB at 14.0 G H z to 14.5 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25°C	OCR Scan	PDF	TIM1414-15