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    CGHV96050F1 Search Results

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    CGHV96050F1 Price and Stock

    MACOM CGHV96050F1

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F1 Tray 28 1
    • 1 $475.75
    • 10 $475.75
    • 100 $475.75
    • 1000 $475.75
    • 10000 $475.75
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    Mouser Electronics CGHV96050F1
    • 1 -
    • 10 -
    • 100 $484.76
    • 1000 $484.76
    • 10000 $484.76
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    Verical CGHV96050F1 30 1
    • 1 $592.85
    • 10 $592.85
    • 100 $592.85
    • 1000 $592.85
    • 10000 $592.85
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    Richardson RFPD CGHV96050F1 30 1
    • 1 $395.21
    • 10 $395.21
    • 100 $395.21
    • 1000 $395.21
    • 10000 $395.21
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    MACOM CGHV96050F1-AMP

    EVAL BOARD FOR CGHV27030S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F1-AMP Box 2
    • 1 -
    • 10 $1152.525
    • 100 $1152.525
    • 1000 $1152.525
    • 10000 $1152.525
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    Richardson RFPD CGHV96050F1-AMP 1
    • 1 -
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    MACOM CGHV96050F1-TB

    CGHV96050F1-TB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical CGHV96050F1-TB 2 2
    • 1 -
    • 10 $666.7
    • 100 $666.7
    • 1000 $666.7
    • 10000 $666.7
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    Richardson RFPD CGHV96050F1-TB 2 1
    • 1 $400
    • 10 $400
    • 100 $400
    • 1000 $400
    • 10000 $400
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    CGHV96050F1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV96050F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210 Original PDF
    CGHV96050F1-AMP Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-AMP Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-TB Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050 Original PDF

    CGHV96050F1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    CGHV96050F1

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1