Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CEB10N6 Search Results

    CEB10N6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEB10N6 Chino-Excel Technology N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package Original PDF

    CEB10N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Text: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6

    Untitled

    Abstract: No abstract text available
    Text: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP10N6/CEB10N6 O-220 O-263

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Text: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6