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    Untitled

    Abstract: No abstract text available
    Text: 6115950 MICROSEMI 02E 00 51 7 CORP/POWER DE I □E ^115^50 D -T-3 3 - 2 9 □□□□517 CCC10021 TPXC TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated n ■ Contact Metallization: Base and emitter-aluminum


    OCR Scan     		PDF CCC10021 emitter-25-mil thickness-18 PTC10020/M PTC10021/MJ10021 300ns,

    Untitled

    Abstract: No abstract text available
    Text: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum


    OCR Scan     		PDF CCC10021A itter-15-m thickness-12 10020/M J10021 10021/M J10021